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IRFB3077PBF

N-ch 75V 210A 2.8mOhm power MOSFET, TO-220, ultra-low RDS(on) for high-current switching

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Pieza del fabricante：

IRFB3077PBF

Paquete：

TO-220AB (15.6 x 10.4 x 4.6mm)

Descripción

Productos

The IRFB3077PBF is an N-channel power MOSFET from Infineon in TO-220 through-hole package, rated at 75V VDSS and 210A ID with only 2.8mOhm typical RDS(on). Designed for ultra-high-current switching applications, it uses advanced HEXFET technology to achieve industry-leading on-resistance in the 75V class, making it ideal for electric vehicle controllers, high-power DC-DC converters, and welder output stages.

Especificaciones

VDSS (Drain-Source Voltage)	75V
ID (Continuous Drain Current)	210A @ TC=25°C (package limited to 75A)
RDS(on) (On-Resistance)	2.8mOhm typ, 3.3mOhm max @ VGS=10V
Qg (Total Gate Charge)	210nC typical
VGS(th) (Gate Threshold)	2.0-4.0V
Power Dissipation	370W @ TC=25°C
Paquete	TO-220AB
Temperature	-55°C to +175°C

Características

Ultra-low 2.8mOhm typical RDS(on) for minimal conduction loss
75V rating suitable for 48V battery systems
210A silicon current capability (75A package limited)
Full avalanche rated for robust operation
TO-220 package for easy heatsink mounting
Industry-standard pinout (G-D-S)

Aplicaciones

Electric vehicle motor controllers (48V systems)
High-power DC-DC converters and inverters
Welding machine output stages
UPS and server power supply switches
Battery disconnect and protection switches

Introducción del producto:IRFB3077PBF Presentación del producto

The IRFB3077PBF is an N-channel power MOSFET from Infineon in TO-220, rated at 75V VDSS and 210A ID (silicon limited; package limit is 75A) with 2.8mOhm typical RDS(on) at VGS=10V. The 75V rating covers 48V battery systems (including electric bicycles, scooters, and mild-hybrids) with adequate margin for voltage spikes. The ultra-low 2.8mOhm RDS(on) produces only 1.4W conduction loss at 22A, or 14W at 70A, dramatically reducing heatsink requirements compared to older MOSFETs. The device uses Infineon’s advanced HEXFET technology with optimized cell density and stripe layout for low RDS(on) and low gate charge (210nC). The TO-220 package provides 0.4°C/W junction-to-case thermal resistance when properly mounted on a heatsink, enabling 370W theoretical dissipation. The body diode has VSD=1.3V at 100A with trr=80ns. The -PBF suffix specifies lead-free TO-220. The IRFB3077 is a popular choice for high-current, low-voltage switching where through-hole mounting and heatsink attachment are preferred.

Principio de funcionamiento:IRFB3077PBF Principio de funcionamiento

The IRFB3077PBF operates as a voltage-controlled N-channel enhancement-mode MOSFET. When VGS exceeds the threshold (2.0-4.0V), the gate oxide field induces an N-type inversion layer in the P-type body region, creating a conductive channel between source and drain. The ultra-low 2.8mOhm RDS(on) is achieved by: (1) Maximum cell density – millions of parallel cell structures on the die; (2) Optimized stripe geometry that minimizes JFET region resistance; (3) Large die area (approximately 60mm²) that reduces resistance proportionally. The gate charge of 210nC represents the total charge needed to switch the device: Qgs (gate-source charge) enhances the channel, Qgd (Miller charge) discharges the drain-gate capacitance during the voltage transition, and Qg(total) includes the plateau charge. At 2A gate drive, the switching time is approximately 105ns, producing 10-30W switching losses at 100kHz depending on load current. The body diode (inherent PN junction) has a forward drop of 1.3V and reverse recovery time of 80ns. In half-bridge configurations, the body diode conducts during dead-time; the 80ns trr is acceptable for frequencies up to 50kHz. For higher frequencies, external Schottky anti-parallel diodes bypass the body diode. The 75V VDSS provides 56% margin over a 48V battery (full charge ~54.6V), accommodating load-dump transients with proper TVS clamping.

Descripción de la clavija:IRFB3077PBF Definición y funciones de las clavijas

Pin	Nombre	Tipo	Función
1	Puerta	Entrada	Gate (VGS threshold 2-4V, max +/-20V, Qg=210nC, connect to gate driver)
2	Drenaje	Potencia	Drain (75V VDSS, 210A silicon, 75A package limited, tab also connects to drain)
3	Fuente	Potencia	Source (connects to ground, current sense resistor, or load return)

Application Scenarios:In which products and applications isIRFB3077PBF usado

48V EV motor controller: Three half-bridges (6x IRFB3077) drive BLDC motor at 50A RMS per phase; 2.8mOhm RDS(on) produces only 7W conduction loss per device at 50A
High-power DC-DC converter: 48V-to-12V synchronous buck at 100kHz; low RDS(on) enables 95%+ efficiency at 100A output
Welder output stage: Parallel 4-6 devices for 200A+ output current; TO-220 allows individual heatsink mounting for thermal management
Battery disconnect switch: 48V battery bank isolation; avalanche rating absorbs cable inductance energy during emergency disconnect

Alternative Models:What chips are recommended as replacements for IRFB3077PBF

Fabricante	Número de pieza	Paquete	Notas
Infineon	IRFB4110PBF	TO-220	100V 180A 3.7mOhm, higher voltage version
Infineon	IRFB4310PBF	TO-220	100V 140A 5.6mOhm, 100V alternative
onsemi	FCH110N65S3R	TO-247	650V 110A SuperFET, onsemi brand
STMicroelectronics	STW210NF75	TO-247	75V 200A 2.6mOhm, ST brand, TO-247
Vishay	SUM110N08-13M2P	TO-247	80V 110A 6.5mOhm, Vishay brand