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IRF3205STRLPBF

N-ch 55V 110A 8mOhm power MOSFET, D2PAK, HEXFET, fully avalanche rated

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Pieza del fabricante：

IRF3205STRLPBF

Paquete：

D2PAK (TO-263-2), 10.67 x 9.65 x 4.83mm

Marca：
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Descripción

Productos

The IRF3205STRLPBF is an N-channel power MOSFET from Infineon (formerly International Rectifier) in D2PAK (TO-263) surface-mount package. Rated at 55V VDSS and 110A ID with only 8.0mOhm RDS(on), it is one of the industry’s lowest on-resistance MOSFETs in this voltage class. The advanced HEXFET technology with fully avalanche rating makes it ideal for high-current DC switching in automotive and industrial applications.

Especificaciones

VDSS (Drain-Source Voltage) 55V
ID (Continuous Drain Current) 110A @ TC=25°C
RDS(on) (On-Resistance) 8.0mOhm max @ VGS=10V
Qg (Total Gate Charge) 146nC @ VDS=44V, VGS=10V
VGS(th) (Gate Threshold) 2.0-4.0V
Power Dissipation 200W @ TC=25°C
Energía de avalancha (EAS) 264mJ single pulse
Paquete D2PAK (TO-263-2), 10.67 x 9.65mm
Temperature -55°C to +175°C

Características

  • Ultra-low 8.0mOhm RDS(on) minimizes conduction losses
  • 110A continuous current in surface-mount D2PAK package
  • Fully avalanche rated for robust unclamped inductive switching
  • Advanced HEXFET vertical structure with low gate charge
  • 175°C maximum junction temperature for automotive environments
  • Lead-free (Pb-Free) D2PAK with tape-and-reel packaging

Aplicaciones

  • Automotive 12V/24V DC motor drives
  • High-current DC-DC converters and inverters
  • Battery management and protection circuits
  • Solar charge controllers and power routing
  • Welding equipment and plasma cutters

The IRF3205STRLPBF is an N-channel enhancement-mode power MOSFET from Infineon in D2PAK (TO-263-2) surface-mount package, rated at 55V VDSS, 110A ID, and 8.0mOhm maximum RDS(on) at VGS=10V. The device uses Infineon’s HEXFET vertical MOSFET structure with thousands of parallel cells, achieving the industry’s lowest on-resistance in the 55V class. At 110A load, the conduction loss is only 110^2 x 0.008 = 96.8W, requiring a heatsink but providing efficient switching of very high currents. The device is fully avalanche rated (264mJ single pulse, 20mJ repetitive), meaning it can safely absorb the energy from an unclamped inductive load without external protection. The gate charge of 146nC requires a 2A gate driver for 73ns switching time. The D2PAK package provides 0.75°C/W junction-to-case thermal resistance, enabling 200W dissipation with adequate heatsinking. The -STRLPBF suffix specifies D2PAK (S=surface mount, TR=tape-and-reel, L=lead-free). The IRF3205 is one of the most popular power MOSFETs in the industry for 12V automotive and battery-powered high-current switching.

The IRF3205STRLPBF is a vertical N-channel enhancement-mode power MOSFET. When VGS exceeds the threshold (2.0-4.0V), an inversion layer forms beneath the gate oxide, creating a conductive channel between source and drain. The HEXFET structure uses thousands of parallel vertical cells, each contributing to the total current capacity and reducing RDS(on) to 8.0mOhm. The gate charge (146nC) represents the charge that must be deposited on the gate capacitance (Ciss=3247pF) to fully enhance the channel. The Miller plateau (Qgd=54nC) occurs when VDS is falling and the drain-gate capacitance (Crss) absorbs charge; this is the slowest part of the switching transition. The body diode (VSD=1.3V at 62A) is an inherent P-N junction between the body and drain; its reverse recovery (trr=69-104ns, Qrr=143-215nC) produces losses in half-bridge and synchronous rectification circuits. The avalanche rating means the device can withstand breakdown (VBR(DSS) > 55V) without damage: when drain voltage exceeds breakdown, current flows through the device and dissipates energy in the silicon. The single-pulse avalanche energy of 264mJ is calculated from the maximum junction temperature (175°C), thermal impedance, and avalanche current. For repetitive avalanche (20mJ), the device self-heats between pulses and the energy per pulse must be lower.

Pin Nombre Tipo Función
1 Puerta Entrada Gate (VGS threshold 2-4V, max +/-20V, Qg=146nC, connect to gate driver)
2 Drenaje Potencia Drain (55V VDSS, 110A ID, connects to load; tab is also drain in D2PAK)
3 Fuente Potencia Source (connects to ground or current sense resistor; tab connects to drain)
  • 12V automotive motor drive: Low 8mOhm RDS(on) produces only 3.2W loss at 20A; parallel two devices for 40A H-bridge motor driver with minimal heatsinking
  • High-current DC-DC converter: Synchronous buck converter at 12V input; 8mOhm RDS(on) achieves 95%+ efficiency at 50A output; body diode provides freewheeling during dead-time
  • Battery protection switch: Disconnects 12V/24V battery bank in overcurrent; avalanche rating absorbs inductive kickback without external clamp
  • Solar charge controller: Switches 30A+ solar panel current with low conduction loss; 55V rating provides margin for 24V systems
Fabricante Número de pieza Paquete Notas
Infineon IRF3205PBF TO-220 Through-hole version, same die, Infineon
Infineon IRFZ44NPBF TO-220 49A 55V 17.5mOhm, lower current alternative
onsemi FDB8832 D2PAK 32V 80A 3.2mOhm, lower voltage, lower RDS(on)
Vishay IRLR7843TRPBF D2PAK 40V 100A 5.3mOhm, Vishay brand
Infineon IRF3205ZSTRLPBF D2PAK 6.5mOhm version, lower RDS(on) variant
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