Inicio > Circuitos integrados IC > FM24CL04B-GTR

FM24CL04B-GTR

4Kbit I2C F-RAM, 10^14 endurance, 151yr retention, NoDelay writes, SOIC-8, AEC-Q100

5680

Inventario efectivo

Ir a la consulta

Image for reference only

Pieza del fabricante：

FM24CL04B-GTR

Paquete：

SOIC-8 (4.97 x 3.98 x 1.47mm)

Descripción

Productos

The FM24CL04B-GTR is a 4-Kbit (512 x 8) nonvolatile F-RAM memory from Infineon (formerly Cypress/Ramtron), featuring an I2C interface up to 1MHz. Unlike EEPROM, it performs writes at bus speed with no delay, supports 100 trillion (10^14) read/write cycles, and retains data for 151 years at 65°C. The device operates from 2.7V to 3.65V with only 100µA active current and 3µA standby, making it a drop-in replacement for I2C EEPROMs in demanding applications.

Especificaciones

Densidad	4 Kbit (512 x 8)
Interface	I2C (up to 1MHz)
Tensión de alimentación	2.7V to 3.65V
Active Current	100µA @ 100kHz
Standby Current	3µA (typical)
Write Endurance	10^14 read/writes (100 trillion)
Data Retention	151 years @ 65°C
Write Speed	NoDelay™ — instant at bus speed
Access Time	550ns (max)
Write Protect	Yes (WP pin)
Paquete	SOIC-8 (4.97 x 3.98 x 1.47mm)
Temperatura de funcionamiento	-40°C to +85°C
Cualificación	AEC-Q100

Características

100 trillion read/write cycles — 100 million times more than EEPROM
151-year data retention at 65°C
NoDelay™ instant writes at bus speed — no polling required
Drop-in hardware replacement for I2C EEPROM
Supports 100kHz, 400kHz, and 1MHz I2C modes
Ultra-low power: 100µA active, 3µA standby
Schmitt trigger inputs for noise immunity
Write protect pin for data security
AEC-Q100 qualified for automotive applications

Aplicaciones

EV charging stations and battery management
Industrial data logging and control systems
Automotive ECUs and telematics
Smart meters and utility metering
Medical device configuration storage
Write-intensive applications where EEPROM wears out

Introducción del producto:FM24CL04B-GTR Presentación del producto

The FM24CL04B-GTR is a 4-Kbit nonvolatile ferroelectric RAM (F-RAM) from Infineon, organized as 512 x 8 bits with an I2C serial interface. Unlike conventional EEPROM, F-RAM writes are instantaneous at bus speed — there is no write delay and no need for acknowledge polling. The device supports an extraordinary 100 trillion (10^14) read/write cycles, which is 100 million times more than typical EEPROM, making it ideal for applications requiring frequent writes. Data retention is guaranteed for 151 years at 65°C. Operating from 2.7V to 3.65V, the FM24CL04B consumes only 100µA active current and 3µA in standby. It is a pin-compatible, drop-in replacement for standard I2C EEPROMs, supporting 100kHz, 400kHz, and 1MHz bus speeds. The AEC-Q100 qualification ensures reliability in automotive environments.

Principio de funcionamiento:FM24CL04B-GTR Principio de funcionamiento

The FM24CL04B uses ferroelectric RAM technology where data is stored by polarizing ferroelectric crystals within each memory cell. Unlike EEPROM which requires a high-voltage charge pump and milliseconds-long erase/write cycles, F-RAM writes are completed in nanoseconds — the data is latched during the I2C acknowledge cycle and stored before the next clock edge. This NoDelay™ write capability eliminates the need for write-cycle polling. The I2C interface supports standard (100kHz), fast (400kHz), and high-speed (1MHz) modes. The write protect (WP) pin, when asserted high, disables all write operations to the entire memory array. The 9-bit address space (8-bit word address + 1-bit page select in slave address) uniquely addresses each of the 512 byte locations.

Descripción de la clavija:FM24CL04B-GTR Definición y funciones de las clavijas

Pin	Nombre	Descripción
1	A0	Address bit A0 (for slave address selection)
2	A1	Address bit A1 (for slave address selection)
3	VSS	Suelo
4	SDA	I2C serial data (open-drain, bidirectional)
5	SCL	I2C serial clock input
6	WP	Write protect (active high disables writes)
7	NC	Sin conexión
8	VDD	Power supply (2.7V to 3.65V)

Application Scenarios:In which products and applications isFM24CL04B-GTR usado

Automotive Data Logging: Use the FM24CL04B to store fault codes, mileage counters, or calibration data that must survive power loss. The 10^14 write endurance handles continuous updates that would wear out EEPROM in months. AEC-Q100 qualification ensures reliability across the automotive temperature range.
Industrial Metering: Store running totals, tariff tables, and calibration parameters in smart meters. The NoDelay™ writes ensure data is captured even during unexpected power interruptions — the write completes before the bus transaction ends, so no data is lost during a power glitch.
EV Battery Management: Log charge/discharge cycle counts, state-of-health data, and cell balancing parameters. The high endurance handles per-cycle writes over the vehicle’s lifetime. The 151-year data retention ensures critical battery data survives long parking periods.

Alternative Models:What chips are recommended as replacements for FM24CL04B-GTR

Modelo	Densidad	Interface	Endurance	Diferencia clave
FM24CL16B-GTR	16Kbit	I2C 1MHz	10^14	Higher density, same family
FM24C04B-GTR	4Kbit	I2C 1MHz	10^12	5V version, lower endurance
MB85RC04V	4Kbit	I2C 400kHz	10^12	Fujitsu F-RAM alternative
24LC04B-I/SN	4Kbit	I2C 400kHz	10^6	EEPROM, lower endurance and speed