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IRFZ44N

55V N-CH MOSFET, 49A, 17.5mOhm RDS(on), TO-220AB, avalanche rated

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Pieza del fabricante：

IRFZ44N

Paquete：

TO-220AB (3-pin, through-hole)

Marca：
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Descripción

Productos

The IRFZ44N from Infineon (formerly International Rectifier) is a 55V N-channel HEXFET power MOSFET in a TO-220AB package. With ultra-low 17.5mOhm RDS(on) at VGS=10V and 49A continuous drain current, it is one of the most popular power MOSFETs for DC-DC conversion, motor drive, and inverter applications.

Especificaciones

Drain-Source Voltage (VDSS) 55V
Continuous Drain Current 49A (TC=25C)
RDS(on) Max 17.5mOhm (VGS=10V)
Gate Threshold Voltage 2V to 4V
Power Dissipation 94W (TC=25C)
Total Gate Charge 63nC (typical)
Avalanche Energy 530mJ (single pulse)
Junction Temperature -55C to +175C
Paquete TO-220AB

Características

  • Advanced HEXFET technology
  • Ultra-low on-resistance: 17.5mOhm
  • High current capability: 49A
  • Fully avalanche rated
  • Dynamic dv/dt rating
  • Fast switching speed
  • 175C operating junction temperature

Aplicaciones

  • Convertidores CC-CC
  • DC motor drive and control
  • Inverter circuits
  • Solenoid and relay drivers
  • Class D audio amplifiers

The IRFZ44N from Infineon is a 55V N-channel power MOSFET in the industry-standard TO-220AB package. Utilizing Advanced HEXFET technology, it achieves extremely low on-resistance of 17.5mOhm at VGS=10V, enabling high-efficiency power switching with minimal conduction losses. The device handles 49A continuous drain current at TC=25C and 160A pulsed drain current, making it one of the most versatile power MOSFETs for medium-voltage applications. It is fully avalanche rated with 530mJ single-pulse energy capability. The 63nC total gate charge allows reasonably fast switching with simple gate drive circuits.

The IRFZ44N is an N-channel enhancement-mode MOSFET. When the gate-to-source voltage exceeds the threshold (2-4V), an inversion layer forms in the P-type body region under the gate oxide, creating a conductive channel between the N+ source and N-epi drain. Full enhancement at VGS=10V minimizes channel resistance to 17.5mOhm. The inherent body diode (PN junction between P-body and N-drift) provides a freewheeling path for inductive loads, with forward voltage of 1.3V and reverse recovery time of 95ns. The gate requires only voltage drive once the input capacitance is charged, enabling efficient switching.

Pin Nombre Tipo Descripción
1 Puerta Entrada Gate control; drive to 10V for minimum RDS(on)
2 Drenaje Potencia Drain terminal; connected to metal tab
3 Fuente Potencia Source terminal; connects to ground or load
  • DC-DC Buck Converters: Serves as the low-side switch in asynchronous buck regulators with 17.5mOhm RDS(on) minimizing conduction losses at currents up to 30A
  • DC Motor H-Bridge: Forms motor driver pairs with 49A current handling and avalanche ruggedness surviving back-EMF transients
  • DC-AC Inverter Output: Switches in push-pull or full-bridge configurations for inverters up to 500W
Modelo Fabricante VDSS ID Diferencia clave
IRF3205 Infineon 55V 110A Much higher current
IRF540N Infineon 100V 33A Higher voltage
IRLZ44N Infineon 55V 47A Logic-level gate
FDP8441 ONsemi 40V 80A Much lower RDS(on)
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