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FM24CL04B-GTR

4Kbit I2C F-RAM, 10^14 endurance, 151yr retention, NoDelay writes, SOIC-8, AEC-Q100

5680

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FM24CL04B-GTR

الحزمة ： الحزمة

SOIC-8 (4.97 x 3.98 x 1.47mm)

الوصف

نظرة عامة على المنتج

The FM24CL04B-GTR is a 4-Kbit (512 x 8) nonvolatile F-RAM memory from Infineon (formerly Cypress/Ramtron), featuring an I2C interface up to 1MHz. Unlike EEPROM, it performs writes at bus speed with no delay, supports 100 trillion (10^14) read/write cycles, and retains data for 151 years at 65°C. The device operates from 2.7V to 3.65V with only 100µA active current and 3µA standby, making it a drop-in replacement for I2C EEPROMs in demanding applications.

المواصفات الرئيسية

الكثافة	4 Kbit (512 x 8)
الواجهة	I2C (up to 1MHz)
جهد الإمداد	2.7V to 3.65V
Active Current	100µA @ 100kHz
التيار الاحتياطي	3µA (typical)
Write Endurance	10^14 read/writes (100 trillion)
الاحتفاظ بالبيانات	151 years @ 65°C
Write Speed	NoDelay™ — instant at bus speed
Access Time	550ns (max)
Write Protect	Yes (WP pin)
الحزمة	SOIC-8 (4.97 x 3.98 x 1.47mm)
درجة حرارة التشغيل	-40 درجة مئوية إلى +85 درجة مئوية
المؤهلات	AEC-Q100

الميزات

100 trillion read/write cycles — 100 million times more than EEPROM
151-year data retention at 65°C
NoDelay™ instant writes at bus speed — no polling required
Drop-in hardware replacement for I2C EEPROM
Supports 100kHz, 400kHz, and 1MHz I2C modes
Ultra-low power: 100µA active, 3µA standby
Schmitt trigger inputs for noise immunity
Write protect pin for data security
مؤهل AEC-Q100 لتطبيقات السيارات

التطبيقات

EV charging stations and battery management
Industrial data logging and control systems
Automotive ECUs and telematics
Smart meters and utility metering
Medical device configuration storage
Write-intensive applications where EEPROM wears out

مقدمة المنتج:FM24CL04B-GTR مقدمة المنتج

The FM24CL04B-GTR is a 4-Kbit nonvolatile ferroelectric RAM (F-RAM) from Infineon, organized as 512 x 8 bits with an I2C serial interface. Unlike conventional EEPROM, F-RAM writes are instantaneous at bus speed — there is no write delay and no need for acknowledge polling. The device supports an extraordinary 100 trillion (10^14) read/write cycles, which is 100 million times more than typical EEPROM, making it ideal for applications requiring frequent writes. Data retention is guaranteed for 151 years at 65°C. Operating from 2.7V to 3.65V, the FM24CL04B consumes only 100µA active current and 3µA in standby. It is a pin-compatible, drop-in replacement for standard I2C EEPROMs, supporting 100kHz, 400kHz, and 1MHz bus speeds. The AEC-Q100 qualification ensures reliability in automotive environments.

مبدأ العمل:FM24CL04B-GTR مبدأ العمل

The FM24CL04B uses ferroelectric RAM technology where data is stored by polarizing ferroelectric crystals within each memory cell. Unlike EEPROM which requires a high-voltage charge pump and milliseconds-long erase/write cycles, F-RAM writes are completed in nanoseconds — the data is latched during the I2C acknowledge cycle and stored before the next clock edge. This NoDelay™ write capability eliminates the need for write-cycle polling. The I2C interface supports standard (100kHz), fast (400kHz), and high-speed (1MHz) modes. The write protect (WP) pin, when asserted high, disables all write operations to the entire memory array. The 9-bit address space (8-bit word address + 1-bit page select in slave address) uniquely addresses each of the 512 byte locations.

وصف الدبوس:FM24CL04B-GTR تعريف الدبوس ووظائفه

دبوس	الاسم	الوصف
1	A0	Address bit A0 (for slave address selection)
2	A1	Address bit A1 (for slave address selection)
3	VSS	أرضي
4	SDA	I2C serial data (open-drain, bidirectional)
5	SCL	مدخل الساعة التسلسلية I2C
6	WP	Write protect (active high disables writes)
7	نورث كارولاينا	No connect
8	VDD	Power supply (2.7V to 3.65V)

Application Scenarios:In which products and applications isFM24CL04B-GTR مستعمل

Automotive Data Logging: Use the FM24CL04B to store fault codes, mileage counters, or calibration data that must survive power loss. The 10^14 write endurance handles continuous updates that would wear out EEPROM in months. AEC-Q100 qualification ensures reliability across the automotive temperature range.
Industrial Metering: Store running totals, tariff tables, and calibration parameters in smart meters. The NoDelay™ writes ensure data is captured even during unexpected power interruptions — the write completes before the bus transaction ends, so no data is lost during a power glitch.
EV Battery Management: Log charge/discharge cycle counts, state-of-health data, and cell balancing parameters. The high endurance handles per-cycle writes over the vehicle’s lifetime. The 151-year data retention ensures critical battery data survives long parking periods.

Alternative Models:What chips are recommended as replacements for FM24CL04B-GTR

الطراز	الكثافة	الواجهة	Endurance	الفرق الرئيسي
FM24CL16B-GTR	16Kbit	I2C 1MHz	10^14	Higher density, same family
FM24C04B-GTR	4Kbit	I2C 1MHz	10^12	5V version, lower endurance
MB85RC04V	4Kbit	I2C 400kHz	10^12	Fujitsu F-RAM alternative
24LC04B-I/SN	4Kbit	I2C 400kHz	10^6	EEPROM, lower endurance and speed