الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > FM25040B-GTR

FM25040B-GTR

4Kbit F-RAM, SPI 20MHz, 10^14 write endurance, instant write, SOIC-8 tape & reel

5578

المخزون الفعال

انتقل إلى الاستفسار

Image for reference only

جزء الشركة المصنعة ： جزء الشركة المصنعة

FM25040B-GTR

الحزمة ： الحزمة

SOIC-8 (150mil, 4.9 x 3.9mm)

الوصف

نظرة عامة على المنتج

The FM25040B-GTR from Infineon Technologies is a 4Kbit F-RAM (Ferroelectric RAM) with SPI interface supporting up to 20MHz clock. With 10^14 write endurance cycles, 151-year data retention at 85°C, and instant write capability, it outperforms EEPROM in both speed and reliability.

المواصفات الرئيسية

Capacity	4Kbit (512 x 8)
الواجهة	SPI (Mode 0 and 3)
Max Clock	20MHz
جهد الإمداد	2.0V – 5.5V
Write Endurance	10^14 cycles (100 trillion)
الاحتفاظ بالبيانات	151 years @85°C
Write Time	Instant (no write delay)
Active Current	1mA
التيار الاحتياطي	1µA
درجة حرارة التشغيل	-40 درجة مئوية إلى +85 درجة مئوية
الحزمة	SOIC-8 (150mil, GTR = tape & reel)

الميزات

10^14 write endurance cycles — virtually unlimited writes
Instant write with no page buffer or write delay
151-year data retention at 85°C for long-term reliability
2.0V-5.5V wide supply range for multi-voltage systems
20MHz SPI clock for fast data transfer
Hardware write protect and software write protect

التطبيقات

Data logging and telemetry storage
Meter calibration and configuration data
Industrial PLC parameter storage
Automotive ECU non-volatile settings

مقدمة المنتج:FM25040B-GTR مقدمة المنتج

The FM25040B-GTR from Infineon Technologies (formerly Ramtron/Cypress) is a 4Kbit F-RAM memory with SPI interface offering virtually unlimited write endurance (10^14 cycles) and instant write capability. Unlike EEPROM, which requires milliseconds for a write cycle and degrades after 10^6 cycles, the F-RAM writes in nanoseconds with no wear-out mechanism, making it ideal for applications requiring frequent non-volatile data writes. The 151-year data retention at 85°C and 20MHz SPI interface provide both reliability and performance in a standard SOIC-8 package.

مبدأ العمل:FM25040B-GTR مبدأ العمل

The FM25040B-GTR uses ferroelectric memory cells where each bit is stored as the polarization state of a lead zirconate titanate (PZT) ferroelectric capacitor. Unlike EEPROM charge storage, which degrades with each write cycle, ferroelectric polarization switching is inherently non-destructive and repeatable for 10^14 cycles without wear-out. A read operation applies an electric field to the capacitor and senses the resulting current pulse; the polarization is then restored automatically (read-restore). Write operations are similarly instantaneous — the new polarization is set in nanoseconds with no erase-then-program sequence required. The SPI interface follows the standard JEDEC command set with opcodes for READ (0x03), WRITE (0x02), WREN (0x06), and WRDI (0x04).

وصف الدبوس:FM25040B-GTR تعريف الدبوس ووظائفه

دبوس	الاسم	الوصف
1	/CS	Chip select (active low)
2	SO	SPI data output (MISO)
3	/WP	Write protect input
4	VSS	أرضي
5	SI	SPI data input (MOSI)
6	SCK	SPI clock input
7	/HOLD	SPI hold (pause communication)
8	VDD	Power supply (2.0-5.5V)

Application Scenarios:In which products and applications isFM25040B-GTR مستعمل

Smart meter data logging with frequent writes
Industrial PLC and automation parameter storage
Automotive ECU calibration and fault code storage
Medical device event logging and configuration data

Alternative Models:What chips are recommended as replacements for FM25040B-GTR

الطراز	الشركة المصنعة	Capacity	الواجهة	Endurance
FM25C04B-GTR	إنفينيون	4Kbit	SPI	10^14
MB85RS04	Fujitsu	4Kbit	SPI	10^12
AT25XE041B	Dialog	4Mbit	SPI	10^6 (EEPROM)
93C46B-E	الرقاقة الدقيقة	1Kbit	Microwire	10^6 (EEPROM)