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AO3401A

P-Ch MOSFET, -30V, -4.2A, 48mOhm, SOT-23, Low RDS(on)

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Pieza del fabricante：

AO3401A

Paquete：

SOT-23-3 (2.9 x 1.3 x 1.0 mm)

Marca：
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Descripción

Productos

The AO3401A from Alpha & Omega Semiconductor is a -30 V, -4.2 A P-channel enhancement mode MOSFET with low 48 mOhm RDS(on) at VGS=-10V in an SOT-23 surface mount package.

Especificaciones

Tipo P-Channel Enhancement Mode MOSFET
VDS (Max) -30 V
ID (Max) -4.2 A
RDS(on) (Max) 48 mOhm @ VGS=-10V
RDS(on) (Max) 70 mOhm @ VGS=-4.5V
VGS (Max) +/-20 V
VGS(th) -0.8 V to -1.5 V
Gate Charge (Qg) 12 nC (typical)
Paquete SOT-23
Temperatura de funcionamiento -55C to +150C (TJ)

Características

  • Low 48 mOhm RDS(on) at -10V VGS
  • 4.2 A continuous drain current
  • Compact SOT-23 package
  • Low gate charge for fast switching
  • RoHS compliant and lead-free
  • High power density for small form factors

Aplicaciones

  • Battery load switches and power routing
  • DC-DC converter high-side P-FET
  • Battery charging/discharging control
  • Reverse polarity protection circuits

The AO3401A from Alpha & Omega Semiconductor is a P-channel enhancement mode MOSFET in a compact SOT-23 package. The device offers low 48 mOhm on-resistance at VGS=-10V and 70 mOhm at VGS=-4.5V, enabling efficient high-side switching in battery-powered and low-voltage systems. The -4.2 A continuous drain current rating supports moderate power load switching. The 12 nC total gate charge allows fast switching with minimal driving loss. The SOT-23 footprint provides high power density for space-constrained portable electronics.

The AO3401A is a P-channel MOSFET where current flows from source to drain when the gate-to-source voltage (VGS) is negative relative to the threshold voltage (-0.8 to -1.5 V). Applying a negative VGS creates an inversion layer (P-type channel) in the N-type body region, connecting the P+ source and P+ drain regions and allowing current to flow. The RDS(on) of 48 mOhm at VGS=-10V represents the channel resistance when fully enhanced. At VGS=-4.5V, the inversion layer is thinner, resulting in higher 70 mOhm RDS(on). For high-side load switching, the source connects to the positive supply rail, and pulling the gate to ground turns the MOSFET on. The low RDS(on) minimizes conduction losses (I2R) during switching, and the low gate charge enables fast switching transitions to minimize switching losses.

Pin Nombre Tipo Función
1 G Entrada Puerta
2 S E/S Fuente
3 D E/S Drenaje
  • Li-ion battery high-side load switch with GPIO control
  • Single-cell DC-DC boost converter high-side P-FET
  • Battery reverse polarity protection using P-FET in source-follower config
  • USB VBUS power routing switch in portable devices
Fabricante Número de pieza Paquete Notas
AOS AO3401 SOT-23 Slightly different RDS(on) bin
Vishay SI2301DS-T1-E3 SOT-23 Pin-compatible, -20V, -2.2A
onsemi NTR4101PT1G SOT-23 -30V, -2.4A, similar class
Infineon BSS84 SOT-23 -50V, -130mA, lower power
AOS AO4407A SOIC-8 -30V, -12A, much higher power
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