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TK100E10N1


100V N 沟道功率 MOSFET、100A/207A、3.4mOhm RDS(导通)、U-MOS VIII-H、TO-220、255W、140nC Qg、开关稳压器

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制造商零件:

TK100E10N1

包装:

TO-220(3 引脚 + Tab)(10.16 x 15.1 x 4.45 毫米,2.54 毫米间距)

品牌:
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说明

东芝公司的 TK100E10N1 是一款 100V N 沟道增强型功率 MOSFET,采用 U-MOS VIII-H 沟槽栅极技术,采用 3 引脚 TO-220 通孔封装 (10.16 x 15.1 x 4.45 mm)。主要规格:VDSS = 100V;VGSS = 正负 20V;ID = 100A(封装限制)/207A(硅限制,TC=25C);IDP(脉冲)= 434A(tp=1ms);PD = 255W (TC=25C);VGS=10V 时,RDS(on) = 2.8 mOhm 典型值/3.4 mOhm 最大值;VGS(th) = 2.0-4.0V; IDSS = 10uA 最大值 (VDS=100V); IGSS = 100nA 最大值; Ciss = 8,800 pF 典型值; Coss = 1,500 pF 典型值; Qg = 140 nC 典型值 (VGS=10V); Qgd = 38 nC 典型值; tr = 32 ns 典型值; tf = 45 ns 典型值; trrr = 93 ns 典型值; Qrr = 220 nC 典型值; EAS = 222 mJ (单脉冲雪崩); IAR = 100A; Rth(ch-c) = 0.49 C/W;Rth(ch-a) = 83.3 C/W。设计用于开关稳压器(DC-DC 转换器、电机驱动器、电源)。应用范围:开关稳压器。世代:U-MOS VIII-H:U-MOS VIII-H。符合 RoHS 规范(TO-220 高温焊料除外),EAR99。有效产品。.

东芝公司的 TK100E10N1 是一款 100V N 沟道功率 MOSFET,采用东芝 U-MOS VIII-H 沟槽栅极技术,在标准 TO-220 通孔封装中实现了极低的导通电阻(典型值为 2.8 mOhm)。它专为直流-直流转换器、电机驱动器和电源中的大电流开关应用而设计,在这些应用中,低导通损耗和快速开关是至关重要的。.

U-MOS VIII-H 技术是东芝公司的第八代沟槽栅 MOSFET 平台,专为高压(60-150V)应用而优化。沟槽栅结构在硅片中形成垂直沟道,沟道密度远高于平面 MOSFET。因此,单位芯片面积的 RDS(on) 更低,在 VGS=10V 时,芯片的最大 RDS(on) 规格为 3.4 mOhm,且符合 TO-220 封装的热限制。.

100V 额定电压使这款 MOSFET 适用于 48V 汽车系统(12V 电池,4 倍裕量)、24V 和 48V 工业电源以及电信 -48V 系统。2.8 mOhm RDS(on)意味着在 50A 连续电流下,传导损耗仅为 7W (I2R = 502 x 0.0028),这在适度散热的情况下是可以承受的。当电流为 100A 时,传导损耗上升到 28W,这就要求采用更大的散热解决方案。.

由于低 RDS(导通)所需的芯片尺寸较大,140 nC 的总栅极电荷相对较高。栅极电荷决定了开关损耗和栅极驱动器功率要求。在开关频率为 100 kHz、栅极驱动电压为 10V 的情况下,栅极驱动器功耗为 Qg x VGS x f = 140nC x 10V x 100kHz = 0.14W,功率不大。不过,开关转换(32ns 上升,45ns 下降)会导致开关损耗随频率增加而增加,因此这种 MOSFET 最适合 200-300 kHz 以下的应用。.

222 mJ(单脉冲)的雪崩能量额定值和 100A 的雪崩电流表明,TK100E10N1 可以在非闭锁开关事件中安全地吸收电感负载回跳产生的能量。这在电感能量可能很大的电机驱动和电磁线圈驱动器应用中非常重要。.

体二极管反向恢复时间为 93 ns,反向恢复电荷为 220 nC,数值适中,会影响桥式拓扑(半桥、全桥、同步降压)的效率,因为体二极管会在死区时间间隔内导通。对于需要更快体二极管恢复时间的应用,可考虑使用专门针对同步整流进行优化的 MOSFET,或使用与体二极管并联的外部肖特基二极管。.

100A 的封装额定电流(相对于 207A 的硅额定电流)反映了 TO-220 引线框架和键合导线的限制。对于连续电流要求超过 100A 的应用,建议使用引线框架更重的 TO-247 或 D2PAK 封装。TC=25C 时的额定功率耗散为 255W,需要无限大的散热器;实际热设计必须考虑散热器热阻和环境温度。.

TK100E10N1 采用 U-MOS VIII-H 沟槽栅技术,作为 N 沟道增强型功率 MOSFET 运行。.

U-MOS VIII-H 沟槽栅极技术:U-MOS VIII-H(第八代高压)技术采用垂直沟槽栅极结构,栅极在硅片上蚀刻的深沟槽中形成。电流从漏极(芯片背面)垂直流过漂移区,通过沟槽侧壁上的反转沟道,到达源极(芯片顶部)。这种垂直结构具有以下几个优点:(1)沟道形成于沟道的垂直侧壁上,因此沟道密度高,沟道电阻低;(2)电流垂直流动,消除了平面 MOSFET 中出现的横向电流拥挤现象;(3)单元间距可以做得很小,从而最大限度地增加单位面积上的单元数量。因此,单位芯片面积的 RDS(on) 极低。.

漂移区和额定电压:100V 额定电压取决于 P 体和 N+ 基底面之间 N 型漂移区的厚度和掺杂程度。当施加 VDS 时(漏极正极),P 体和 N 型漂移区之间的 P-N 结为反向偏压,耗尽区延伸至漂移区。漂移区的厚度和掺杂程度必须足够轻,以维持 100V 电压而不发生击穿,但这会增加漂移区电阻,而漂移区电阻是 RDS(导通)的主要组成部分。U-MOS VIII-H 技术优化了漂移区轮廓(包括电荷耦合结构或重浮技术),在保持 100V 击穿电压的同时将漂移电阻降至最低。.

开关操作:当向栅极施加高于 VGS(th)(2.0-4.0V)的正向电压时,P 体表面会沿着沟道侧壁形成一个反相层(N 型沟道),将 N+ 源极与 N 漂移区连接起来。电流从漏极流向源极(传统方向)。当去除栅极电压(VGS = 0V)时,反相层消失,电流停止。开关速度受限于栅极电容(Ciss = 8800 pF)充放电所需的时间。栅极驱动器必须在导通期间提供栅极电荷 (Qg = 140 nC),并在关断期间吸收栅极电荷。.

雪崩操作:当关闭电感负载时,漏极电压会因电感踢脚(V = L x dI/dt)而升至击穿电压 (BVdss) 以上。在雪崩模式下,MOSFET 通过由 N+ 源极、P 体和 N 漂移区形成的寄生 NPN 晶体管传导电流。TK100E10N1 通过了 100% 雪崩测试,这意味着每个器件都经过验证,能够在指定的雪崩事件中存活而不发生劣化。单脉冲雪崩能量(EAS = 222 mJ)是器件在单次事件中能吸收而不受损害的最大能量。.

体二极管:P 型体到 N 型漂移区的结形成一个固有的体二极管,阳极位于源极,阴极位于漏极。当 VDS 为负值(源极高于漏极)时,体二极管为正向偏压并导通电流。在半桥和同步降压转换器中,当两个 MOSFET 均关断时,体二极管在死区时间内导通。当相对的 MOSFET 接通并迫使体二极管恢复时,体二极管反向恢复(trr = 93 ns,Qrr = 220 nC)会产生开关损耗。.

针脚 名称 类型 说明
1 闸门 (G) 输入 MOSFET 栅极端子;控制开/关状态;应用 VGS > VGS(th) (2.0-4.0V) 时开启;建议使用 VGS = 10V 以获得最小 RDS(on)(最大 3.4 mOhm);VGS = 4.5-5V 可用于逻辑电平驱动,但 RDS(on) 较高;最大 VGS = 正负 20V;增加串联栅极电阻(1-10 欧姆)以控制开关速度并降低 EMI;栅极电荷 Qg = 140 nC(VGS=10V 时的典型值)决定了栅极驱动器的电流要求;使用栅极驱动器 IC(如 TC4420)实现快速开关、TC4420)实现快速开关
2 排水 (D) 排水 MOSFET 漏极端子;也连接到 TO-220 封装的凸片(散热器安装表面);当器件导通(N 沟道)时,电流流入漏极;凸片提供了从芯片到散热器的主要热路径;使用导热化合物和绝缘垫(如需要)安装在散热器上;最大漏极-源极电压 100V;体二极管阴极连接到漏极
3 来源 (S) 资料来源 MOSFET 源极端子;当器件导通(N 沟道)时,电流从源极流出;在典型的低侧开关配置中,连接至接地端或电流检测电阻器;体二极管阳极连接至源极;对于开尔文源极连接(以尽量减少源极电感效应),使用一根单独的导线从源极引脚连接至栅极驱动器接地端
应用 说明
48V DC-DC 降压转换器 在 48V 输入降压转换器中用作高压侧或低压侧开关;100V 额定电压为 48V+ 瞬态电压提供了裕量;3.4 mOhm RDS(on)最大限度地降低了 30-50A 输出时的传导损耗;在 100-200kHz 开关频率下可管理 140nC 栅极电荷;与互补 MOSFET 配对实现同步降压;典型应用:电信电源、服务器 VRM、48V 电池系统
电机驱动(48V BLDC) 用于 48V BLDC 电机驱动的三相逆变器桥;三个半桥脚各使用两个 TK100E10N1;100A 封装电流可支持大扭矩启动电流;2.8 mOhm RDS(on) 可在 20-50A 连续电流下保持低导通损耗;222mJ 雪崩能量可防止电机绕组产生感应回跳;体二极管可在死区时间内提供续流路径
热插拔/浪涌电流限制器 在将 48V 插卡热插拔到背板时控制浪涌电流;MOSFET 可在电容器充电期间缓慢提升栅极电压以限制电流;100V 额定电压可承受输入电压和瞬态;255W 功率耗散可在提升期间将浪涌限制在安全水平;与电流检测电阻器和比较器一起使用可实现主动电流限制
电池保护开关 电池管理系统中的串联通过元件,适用于 48V 锂电池组;100V 额定电压可承受全充电电压并留有余量;超低 RDS(on) (3.4 mOhm) 可最大限度地降低压降和功率耗散;100A 连续电流可支持高放电率电池组;雪崩保护可处理故障瞬变
D 类音频放大器输出级 用于大功率 D 类音频放大器的半桥输出级;100V 额定电压支持 500W+ 输出的高电源电压轨;低 RDS(on),将 I2R 损耗降至最低;开关速度(32ns 上升,45ns 下降)适用于 200-500kHz PWM 载波频率;体二极管反向恢复会影响死区时间失真;考虑采用外部肖特基以获得最低 THD
模型 制造商 兼容性 主要区别
TK100A10N1 东芝 相同的模具,不同的包装 相同的 100V/3.4mOhm MOSFET 芯片,采用 TO-220S(更小的变体)或不同的封装选项;相同的 U-MOS VIII-H 技术;验证封装尺寸和热性能;需要特定东芝封装变体时使用
TK100E08N1 东芝 低电压兄弟姐妹 80V N 沟道 MOSFET,U-MOS VIII-H,TO-220;RDS(on) = 2.6 mOhm typ(因额定电压较低而略低);207A 硅电流;相同的栅极电荷;在 48V 应用中使用,其中 80V 额定电压提供足够的裕量,并且需要较低的 RDS(on)
IRFP4468PbF 英飞凌/IR 竞争对等 100V N 沟道 MOSFET,TO-220;RDS(on) = 2.6 mOhm typ;195A 硅电流;280W 功率耗散;性能相似;广泛可用;用作第二源或竞争性替代品
FDBL86361-F085 ON 半 SMD 中的类似规格 100V N 沟道 MOSFET,D2PAK-7(表面贴装);RDS(on)= 3.4 mOhm(最大值);120A 封装电流;开尔文源,可降低电感;表面贴装封装,适用于自动装配;在首选 SMD 封装时使用
IPP041N12N3 G 英飞凌 更高电压替代方案 120V N 沟道 MOSFET,TO-220;RDS(on) = 4.1 mOhm(最大值);OptiMOS 3 技术;更高的电压裕量,适用于具有高瞬态尖峰的 48V 系统;RDS(on) 稍高;当瞬态电压要求为 100V 时使用。
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服务与包装

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

Core Services

1. One-stop Sourcing & BOM Support

We specialize in a full range of passive and active electronic components, including SMD resistors, power resistors, connectors, aviation connectors, LED beads, flexible circuit boards, printed circuit boards, and integrated circuits. Our professional team provides BOM list consolidation, component matching, and alternative model recommendation services. We support sample orders, small-batch trial production, and mass production orders with flexible MOQs to meet diverse procurement needs.

2. Genuine Product Guarantee & Full-process Quality Inspection

All products are sourced from official authorized channels and are 100% original genuine parts. Every batch of goods undergoes strict full-process quality inspection before delivery, with complete batch records and traceability documents provided. Our products comply with AEC-Q standards for automotive electronics and high-reliability specifications for medical devices. We eliminate counterfeits, refurbished parts and defective products from the source to secure your project production.

3. Fast Quotation & Order Processing

Our customer service team responds promptly to inquiries and quotation requests. All in-stock orders will be processed within one working day. We provide stocking reservation services for long-term cooperative customers, effectively solving problems such as component shortages and unstable supply chains.

4. Professional Technical Support

Our senior engineer team provides free technical consultation, model selection guidance and original manufacturer datasheets. We assist customers in solving problems related to product R&D, circuit design and component application, providing reliable technical support for project progress.

5. Sourcing for Special Components

Relying on our global supply chain network, we professionally source scarce components, obsolete parts and customized special components to efficiently solve your procurement difficulties.

6. Global Logistics & Document Services

We cooperate with mainstream international logistics providers including DHL, FedEx, UPS and TNT to achieve fast global delivery. We can provide complete export documents such as customs declaration files, commercial invoices and packing lists to ensure smooth customs clearance for international shipments. Local pickup is also available for customers in Shenzhen, China.

Professional Packaging Standards

Electronic components are sensitive to static electricity, collision, moisture and dust. We adopt industry-standard anti-static packaging solutions to fully ensure the integrity of goods during transportation and storage.

1. General Packaging Specifications

  • All components are packed separately to avoid damage caused by friction and collision;
  • Shockproof buffer materials are added for fragile products to ensure transportation safety;
  • Each package is clearly marked with part number, quantity, batch number and specifications for easy inventory counting and management.

2. Classified Professional Packaging

  • Anti-static Packaging: Static-sensitive components such as chips, circuit boards and sensors are packaged with anti-static bags, shielding boxes and conductive foam in strict accordance with international anti-static standards to prevent static damage.
  • Vacuum Moisture-proof Packaging: Moisture-sensitive components are vacuum-sealed with desiccants to isolate humid air, suitable for ocean transportation and long-term storage.
  • Original Factory Packaging: Integrated circuits of brands such as NXP are delivered with original reels, trays or tubes by default, retaining complete original packaging and adapting to automated SMT production lines.
  • Discrete Device Packaging: Discrete devices such as SMD resistors, power resistors and LEDs are quantitatively and classifiedly packaged with accurate quantity and clear marking.
  • Connector / Aviation Connector Packaging: Hard outer packaging is adopted to prevent pin bending and structural deformation.

3. Custom Packaging Services

We provide value-added services including personalized packaging, custom labeling and re-reeling according to customer requirements, fully matching your production and warehouse management standards.

Contact Information

For service consultation or packaging customization, please feel free to contact us:
Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

Online Inquiry Form

Support Excel, PDF, CSV format files for full BOM list quotation

Submit your component procurement and custom packaging needs via the form below. We will provide a detailed quotation and professional solution within 1–8 working hours.