产品概览
The STF26NM60N is an N-channel 600V MDmesh II power MOSFET from STMicroelectronics with 165 mOhm max RDS(ON), 20A drain current, and 100% avalanche tested in a D2PAK (TO-263) package.
主要规格
| Channel Type | N-Channel Enhancement |
| Drain-Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID) | 20 A (at TC=25°C) |
| RDS(ON) max | 165 mOhm @ VGS=10V |
| RDS(ON) typical | 135 mOhm @ VGS=10V |
| Gate Threshold Voltage | 3.0 V to 4.5 V |
| Total Gate Charge (Qg) | 62 nC typical |
| Input Capacitance (Ciss) | 2200 pF typical |
| Reverse Recovery Charge (Qrr) | 9.5 µC typical |
| 雪崩能源(EAS) | 500 mJ |
| 功率耗散 | 160 W (at TC=25°C) |
| 工作温度 | -55°C to +175°C (Tj) |
| 包装 | D2PAK / TO-263-3 |
特点
- MDmesh II technology (strip layout vertical structure)
- 100% avalanche tested for guaranteed ruggedness
- Low input capacitance and gate charge
- Low gate input resistance for fast switching
- High dv/dt capability
- Suitable for hard switching and resonant topologies
应用
- Switch-mode power supplies
- 功率因数校正 (PFC)
- Motor drives
- Lighting converters
- 直流-直流转换器