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STF26NM60N

N-ch MDmesh II MOSFET, 600V, 20A, 165mOhm, D2PAK/TO-263

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Pieza del fabricante：

STF26NM60N

Paquete：

D2PAK / TO-263-3 (Surface Mount)

Marca：
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Descripción

Productos

The STF26NM60N is an N-channel 600V MDmesh II power MOSFET from STMicroelectronics with 165 mOhm max RDS(ON), 20A drain current, and 100% avalanche tested in a D2PAK (TO-263) package.

Especificaciones

Channel Type N-Channel Enhancement
Drain-Source Voltage (VDSS) 600 V
Continuous Drain Current (ID) 20 A (at TC=25°C)
RDS(ON) max 165 mOhm @ VGS=10V
RDS(ON) typical 135 mOhm @ VGS=10V
Gate Threshold Voltage 3.0 V to 4.5 V
Total Gate Charge (Qg) 62 nC typical
Input Capacitance (Ciss) 2200 pF typical
Reverse Recovery Charge (Qrr) 9.5 µC typical
Energía de avalancha (EAS) 500 mJ
Power Dissipation 160 W (at TC=25°C)
Temperatura de funcionamiento -55°C to +175°C (Tj)
Paquete D2PAK / TO-263-3

Características

  • MDmesh II technology (strip layout vertical structure)
  • 100% avalanche tested for guaranteed ruggedness
  • Low input capacitance and gate charge
  • Low gate input resistance for fast switching
  • High dv/dt capability
  • Suitable for hard switching and resonant topologies

Aplicaciones

  • Switch-mode power supplies
  • Corrección del factor de potencia (PFC)
  • Motor drives
  • Lighting converters
  • Convertidores CC-CC

The STF26NM60N is an N-channel power MOSFET from STMicroelectronics using MDmesh II technology, which employs a strip layout vertical structure to achieve 600V blocking voltage with 135 mOhm typical RDS(ON). The device is rated for 20A continuous drain current and 160W power dissipation in a D2PAK (TO-263) surface-mount package. It features 100% avalanche testing for guaranteed ruggedness, low gate charge (62 nC) for efficient switching, and low input capacitance (2200 pF). The MDmesh II technology provides superior performance in both hard-switching and resonant topologies with excellent dv/dt capability. The device is suitable for PFC stages, motor drives, and switch-mode power supplies operating from rectified mains.

The STF26NM60N uses ST’s MDmesh II (Mesh Drain) technology, a vertical power MOSFET structure where the gate is formed in narrow trenches between P-body regions, and the drain is the bottom of the die. The strip layout (as opposed to the traditional hexagonal cell layout) provides more uniform current distribution and better utilization of the silicon area, resulting in lower specific on-resistance. When VGS exceeds the threshold (3.0-4.5V), an inversion layer forms beneath the gate oxide in the P-body region, connecting the N+ source to the N-epitaxial drain and allowing current to flow vertically. The N-epitaxial layer provides the 600V blocking capability when the device is off, as the depletion region extends through this layer under reverse bias. The MDmesh structure’s dense cell pitch reduces the JFET region resistance that limits conventional DMOS performance. The strip layout also improves avalanche ruggedness by distributing the avalanche current more uniformly across the die. The 100% avalanche testing at 500 mJ ensures each device can absorb unclamped inductive energy without failure. The body diode has a typical reverse recovery charge of 9.5 µC, which should be considered in bridge and synchronous rectifier applications.

Pin Nombre Tipo Descripción
1 Puerta Entrada Gate control terminal
2 Drenaje Potencia Drain terminal (connected to tab)
3 Fuente Potencia Source terminal
Pestaña Drenaje Potencia Thermal pad, electrically connected to drain
  • PFC Stages: 600V rating and 165 mOhm RDS(ON) suit continuous-conduction-mode boost PFC in 200-400W power supplies
  • Switch-Mode Supplies: Low 62 nC gate charge and fast switching reduce losses in half-bridge and forward converters
  • Motor Drives: 20A current rating and avalanche ruggedness for inverter-driven AC and BLDC motor applications
  • Lighting Converters: MDmesh II technology provides efficient switching in high-frequency electronic ballast and LED driver circuits
  • DC-DC Converters: Low input capacitance (2200 pF) minimizes switching losses in telecom and industrial DC-DC stages
Modelo Fabricante Diferencia clave
STB26NM60N ST Same die in DPAK (TO-252) package
STP26NM60N ST Same die in TO-220 through-hole
STF26NM60ND ST Improved body diode version
IPP60R099CPA Infineon 600V CoolMOS, 99 mOhm, TO-263
FCH26N60N onsemi 600V SuperFET, 138 mOhm, D2PAK
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