SS34

3A, 40V Schottky rectifier, 550mV VF, SMA package, fast switching

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制造商零件：

SS34

包装：

SMA (DO-214AC) (5.20 x 2.60 x 2.15 mm)

说明

产品概览

The SS34 from onsemi is a 3 A, 40 V Schottky barrier rectifier in an SMA (DO-214AC) surface-mount package. With a low forward voltage drop of 550 mV at 3 A and fast switching capability, it is designed for high-efficiency rectification in switch-mode power supplies, DC-DC converters, and reverse polarity protection applications.

主要规格

Reverse Voltage (VRRM)	40 V
Average Forward Current (IFAV)	3 A
Forward Voltage (VF @ 3 A)	550 mV (max)
Reverse Leakage (IR @ 40 V)	500 µA (max at 25°C)
Peak Forward Surge (IFSM)	80 A
工作温度	-55°C 至 +150°C
包装	SMA (DO-214AC)

特点

Low forward voltage drop for reduced conduction losses
High forward current capability: 3 A average
80 A peak forward surge rating for robust transient handling
Fast switching with negligible reverse recovery time
Metal barrier construction for reliability
Pb-Free and RoHS compliant

应用

Switch-mode power supply output rectification
DC-DC converter freewheeling diode
Reverse polarity and reverse current protection
Battery charging and power OR-ing
General-purpose power rectification

产品介绍：SS34 产品介绍

The SS34 is a 3 A, 40 V Schottky barrier rectifier from onsemi in an SMA (DO-214AC) surface-mount package. As a Schottky device, it features a low forward voltage drop of 550 mV maximum at 3 A and negligible reverse recovery time, resulting in significantly lower switching losses compared to standard PN junction rectifiers. The metal-silicon junction construction provides fast switching performance essential for high-frequency SMPS and DC-DC converter applications. With an 80 A non-repetitive peak forward surge current rating and a -55°C to +150°C operating temperature range, the SS34 offers robust transient handling and reliable operation in demanding environments. The SMA package provides a compact footprint with adequate thermal performance for the 3 A current rating. The device is Pb-Free and RoHS compliant.

工作原理：SS34 工作原理

The SS34 operates using a metal-semiconductor (Schottky) junction rather than a conventional PN junction. Under forward bias, majority carriers (electrons) cross the metal-silicon barrier with low resistance, producing the characteristic low forward voltage drop of approximately 550 mV at rated current. Because Schottky diodes are majority-carrier devices, there is essentially no stored minority carrier charge during conduction, resulting in negligible reverse recovery time and near-zero reverse recovery loss. This makes the SS34 ideal for high-frequency switching applications where recovery losses in PN diodes would be prohibitive. The guard ring structure around the Schottky contact prevents edge breakdown and improves the reverse voltage capability to 40 V. Under reverse bias, the barrier blocks current flow with a maximum leakage of 500 µA at rated voltage and 25°C.

引脚说明：SS34 引脚定义和功能

针脚	名称	功能
1	阴极	Negative terminal; identified by cathode bar on package
2	阳极	Positive terminal

Package: SMA (DO-214AC). Pin 1 (Cathode) is identified by the white bar marking on the top surface. This is a two-terminal rectifier device.

Application Scenarios:In which products and applications isSS34 中古

SMPS Output Rectification: High-frequency secondary-side rectification in flyback and forward converters
DC-DC Converter Freewheeling: Catch diode across the inductor in buck and buck-boost converters
Reverse Polarity Protection: Series blocking diode at battery or power input connectors
Power OR-ing: Diode-OR redundancy in dual-power-supply systems
Battery Charging: Reverse current blocking in battery charger output stages

Alternative Models:What chips are recommended as replacements for SS34

模型	制造商	IF	VR	VF	包装	说明
MBRS340T3G	onsemi	3 A	40 V	500 mV	SMC	Lower VF, AEC-Q101
SS36	onsemi	3 A	60 V	700 mV	SMA	Higher voltage rating
SK34	MCC	3 A	40 V	550 mV	SMC	Equivalent in SMC package
CDBSM340-G	Comchip	3 A	40 V	530 mV	SMA	Lower VF alternative
SB340-E3/54	Vishay	3 A	40 V	500 mV	SMA	Lower VF, same footprint

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