产品概览
The NVMFD5C466NLT1G is an onsemi AEC-Q101 qualified dual N-channel power MOSFET in a compact DFN-8 (5x6mm) package. Featuring 40V VDSS, 7.4mΩ max RDS(on) at 10V, and 52A continuous drain current per die, it is designed for automotive motor drive and load switching applications requiring high current density in a small footprint.
主要规格
| 配置 | Dual N-Channel (common drain) |
| Drain-Source Voltage (VDSS) | 40V |
| On-Resistance (RDS(on)) Max | 7.4mΩ @ VGS=10V; 12mΩ @ VGS=4.5V |
| Continuous Drain Current (ID) | 52A (per die, TC=25°C) |
| Gate Charge (Qg) Typ | 16nC @ VGS=10V; 7nC @ VGS=4.5V |
| Input Capacitance (Ciss) | 860pF (typ) @ VDS=25V |
| 功率耗散 | 40W (per die) |
| 工作温度 | -55°C to +175°C |
| 资格 | AEC-Q101 |
特点
- AEC-Q101 qualified and PPAP capable
- Dual N-channel in compact DFN-8 (5x6mm) package
- Low RDS(on): 7.4mΩ max @ 10V for minimal conduction loss
- Low gate charge for efficient switching
- 100% avalanche tested
- Wettable flank option available (NVMFD5C466NLWFT1G)
- PowerTrench® T6 technology
应用
- Automotive motor drive half-bridge stages
- DC motor H-bridge drives
- Automotive engine controllers
- ABS/ESC braking systems
- Low-side and high-side load switches