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NVMFD5C466NLT1G

AEC-Q101 dual N-ch 40V 52A 7.4mΩ MOSFET, DFN-8 (5x6mm), PowerTrench T6

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Manufacturer Part：

NVMFD5C466NLT1G

Package：

DFN-8 (5 x 6 x 1.05 mm)

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Description

Product Overview

The NVMFD5C466NLT1G is an onsemi AEC-Q101 qualified dual N-channel power MOSFET in a compact DFN-8 (5x6mm) package. Featuring 40V VDSS, 7.4mΩ max RDS(on) at 10V, and 52A continuous drain current per die, it is designed for automotive motor drive and load switching applications requiring high current density in a small footprint.

Key Specifications

Configuration Dual N-Channel (common drain)
Drain-Source Voltage (VDSS) 40V
On-Resistance (RDS(on)) Max 7.4mΩ @ VGS=10V; 12mΩ @ VGS=4.5V
Continuous Drain Current (ID) 52A (per die, TC=25°C)
Gate Charge (Qg) Typ 16nC @ VGS=10V; 7nC @ VGS=4.5V
Input Capacitance (Ciss) 860pF (typ) @ VDS=25V
Power Dissipation 40W (per die)
Operating Temperature -55°C to +175°C
Qualification AEC-Q101

Features

  • AEC-Q101 qualified and PPAP capable
  • Dual N-channel in compact DFN-8 (5x6mm) package
  • Low RDS(on): 7.4mΩ max @ 10V for minimal conduction loss
  • Low gate charge for efficient switching
  • 100% avalanche tested
  • Wettable flank option available (NVMFD5C466NLWFT1G)
  • PowerTrench® T6 technology

Applications

  • Automotive motor drive half-bridge stages
  • DC motor H-bridge drives
  • Automotive engine controllers
  • ABS/ESC braking systems
  • Low-side and high-side load switches

The NVMFD5C466NLT1G is an onsemi AEC-Q101 qualified dual N-channel power MOSFET in a DFN-8 (5x6mm) package, featuring 40V VDSS, 7.4mΩ max RDS(on) at 10V, and 52A continuous drain current per die. Built on PowerTrench® T6 technology, it delivers low conduction and switching losses for automotive motor drive and load switching applications. The dual configuration enables compact half-bridge layouts in DC motor drives, ABS/ESC systems, and engine controllers.

The NVMFD5C466NLT1G contains two independent N-channel enhancement-mode MOSFETs in a single DFN-8 package with common drain connection. Each MOSFET operates as a voltage-controlled switch: applying a gate-source voltage above the threshold (1.2-2.2V) creates an inversion layer in the P-body region, forming a conductive channel between drain and source. The PowerTrench® T6 technology uses trench gate construction with optimized cell density to achieve 7.4mΩ RDS(on) in a compact 5x6mm footprint. The dual configuration allows both high-side and low-side MOSFETs of a half-bridge to be placed adjacent to each other, minimizing parasitic loop inductance. At VGS=4.5V, the 12mΩ RDS(on) enables direct drive from 5V logic, while at VGS=10V the RDS(on) drops to 7.4mΩ for minimum conduction loss.

Pin Mnemonic Description
1 S1 Source of MOSFET 1
2 G1 Gate of MOSFET 1
3 S2 Source of MOSFET 2
4 G2 Gate of MOSFET 2
5-8 D1/D2 Drain (common, connected to exposed pad)
EP Drain Exposed pad (drain, thermal and electrical)
  • Automotive DC motor H-bridge drive with two dual MOSFETs for full-bridge configuration
  • ABS/ESC valve driver half-bridge stage with 40V rating and 52A peak current
  • Engine controller solenoid driver with low-side switch using 7.4mΩ RDS(on)
  • Automotive DC-DC converter synchronous buck stage with dual MOSFETs
  • High-current load switch with parallel dual MOSFETs for 3.7mΩ effective RDS(on)
Model Manufacturer Key Difference
NVMFD5C466NLWFT1G onsemi Same die with wettable flanks for AOI
IRF3205PBF Infineon Single N-ch, 55V, 8mΩ, TO-220
AO3400A AOS Single N-ch, 30V, SOT-23
SJM3359B1W2T1G onsemi Dual P-ch companion device
NVMFS5C466NLT1G onsemi Same function, SO-8FL package
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