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IRF640N

200V N-ch MOSFET, 150mR RDS(on), 18A, TO-220

10200

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制造商零件：

IRF640N

包装：

TO-220AB (15.60 x 10.40 x 4.60 mm)

品牌：
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说明

产品概览

The IRF640N from Infineon (formerly International Rectifier) is a 200V N-channel power MOSFET with 0.15 Ohm RDS(on) at 10V gate drive and 18A continuous drain current in a TO-220 through-hole package.

主要规格

类型 N-Channel Enhancement MOSFET
VDSS 200 V
身份证 18 A (continuous @ TC=25°C)
RDS(on) 0.15 Ohm max @ VGS=10V
VGS(th) 2.0 to 4.0 V
Total Gate Charge 47 nC typical
功率耗散 140 W @ TC=25°C
工作温度 -55°C to +175°C
包装 TO-220AB (3-pin)

特点

  • 200V N-ch power MOSFET with 150mOhm RDS(on) and 18A in TO-220
  • Industry-standard device for medium-voltage switching and motor drive

应用

  • Motor drive and H-bridge inverters at 24-48V bus voltage
  • Switching power supply and DC-DC converter at 200V

The IRF640N from Infineon is an industry-standard 200V N-channel enhancement-mode power MOSFET in a TO-220 through-hole package. The device features 0.15 Ohm maximum on-resistance at VGS=10V with 18A continuous drain current, making it one of the most widely used medium-voltage MOSFETs for motor drive, switching power supply, and general-purpose power switching applications. The 200V breakdown voltage provides adequate margin for 48V and 80V bus systems including automotive 12V/24V applications with inductive spike margin. The N suffix denotes the improved version with lower RDS(on) than the original IRF640. The TO-220 package provides 140W power dissipation at TC=25°C with easy heatsink mounting. The 47nC gate charge is moderate for this voltage/current class, allowing efficient switching at frequencies up to approximately 200kHz with appropriate gate drive.

The IRF640N is a planar N-channel enhancement-mode vertical DMOS power MOSFET. (1) N-Channel Enhancement: The device is normally off. When VGS exceeds the threshold (2.0-4.0V), an inversion layer forms under the gate oxide, creating a conduction channel. Current flows from drain to source through the channel and the drift region. The body diode (anode at source, cathode at drain) provides a freewheeling path for inductive loads. (2) Planar DMOS Structure: The planar cell geometry uses a double-diffused channel to achieve a short channel length with precise control. The vertical current flow from drain (bottom of die) to source (top) maximizes the current handling per unit die area. (3) 200V Rating: The lightly-doped epitaxial drift region supports 200V breakdown. This region contributes to the RDS(on), which at 150mOhm is a good balance for the 200V/18A rating. (4) Ruggedness: The device is rated for single-pulse avalanche energy and has a safe operating area (SOA) suitable for linear and switching applications.

针脚 名称 功能
1 G 大门
2 D 排水
3 S 资料来源
选项卡 D Drain (connected to case)
  • Motor drive and H-bridge inverters at 24-48V bus with 18A rating
  • 200V switching power supply and DC-DC converter primary switch
制造商 部件编号 包装 说明
英飞凌 IRF640 TO-220 Original version, higher Ron
onsemi FQA19N20 TO-220 200V, 19A, similar
ST STW20NM50 TO-247 500V, 20A, higher voltage
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Contact Information

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Tel / WhatsApp: +86 13760382860

服务与包装

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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All products are sourced from official authorized channels and are 100% original genuine parts. Every batch of goods undergoes strict full-process quality inspection before delivery, with complete batch records and traceability documents provided. Our products comply with AEC-Q standards for automotive electronics and high-reliability specifications for medical devices. We eliminate counterfeits, refurbished parts and defective products from the source to secure your project production.

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Contact Information

For service consultation or packaging customization, please feel free to contact us:
Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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