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IRF640N

200V N-ch MOSFET, 150mR RDS(on), 18A, TO-220

10200

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جزء الشركة المصنعة ： جزء الشركة المصنعة

IRF640N

الحزمة ： الحزمة

TO-220AB (15.60 x 10.40 x 4.60 mm)

الوصف

نظرة عامة على المنتج

The IRF640N from Infineon (formerly International Rectifier) is a 200V N-channel power MOSFET with 0.15 Ohm RDS(on) at 10V gate drive and 18A continuous drain current in a TO-220 through-hole package.

المواصفات الرئيسية

النوع	N-Channel Enhancement MOSFET
VDSS	200 V
بطاقة الهوية	18 A (continuous @ TC=25°C)
RDS(تشغيل)	0.15 Ohm max @ VGS=10V
VGS(th)	2.0 to 4.0 V
Total Gate Charge	47 nC typical
تبديد الطاقة	140 W @ TC=25°C
درجة حرارة التشغيل	-55°C to +175°C
الحزمة	TO-220AB (3-pin)

الميزات

200V N-ch power MOSFET with 150mOhm RDS(on) and 18A in TO-220
Industry-standard device for medium-voltage switching and motor drive

التطبيقات

Motor drive and H-bridge inverters at 24-48V bus voltage
Switching power supply and DC-DC converter at 200V

مقدمة المنتج:IRF640N مقدمة المنتج

The IRF640N from Infineon is an industry-standard 200V N-channel enhancement-mode power MOSFET in a TO-220 through-hole package. The device features 0.15 Ohm maximum on-resistance at VGS=10V with 18A continuous drain current, making it one of the most widely used medium-voltage MOSFETs for motor drive, switching power supply, and general-purpose power switching applications. The 200V breakdown voltage provides adequate margin for 48V and 80V bus systems including automotive 12V/24V applications with inductive spike margin. The N suffix denotes the improved version with lower RDS(on) than the original IRF640. The TO-220 package provides 140W power dissipation at TC=25°C with easy heatsink mounting. The 47nC gate charge is moderate for this voltage/current class, allowing efficient switching at frequencies up to approximately 200kHz with appropriate gate drive.

مبدأ العمل:IRF640N مبدأ العمل

The IRF640N is a planar N-channel enhancement-mode vertical DMOS power MOSFET. (1) N-Channel Enhancement: The device is normally off. When VGS exceeds the threshold (2.0-4.0V), an inversion layer forms under the gate oxide, creating a conduction channel. Current flows from drain to source through the channel and the drift region. The body diode (anode at source, cathode at drain) provides a freewheeling path for inductive loads. (2) Planar DMOS Structure: The planar cell geometry uses a double-diffused channel to achieve a short channel length with precise control. The vertical current flow from drain (bottom of die) to source (top) maximizes the current handling per unit die area. (3) 200V Rating: The lightly-doped epitaxial drift region supports 200V breakdown. This region contributes to the RDS(on), which at 150mOhm is a good balance for the 200V/18A rating. (4) Ruggedness: The device is rated for single-pulse avalanche energy and has a safe operating area (SOA) suitable for linear and switching applications.

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