FGH40T120SMD

The FGH40T120SMD from onsemi is a 1200V, 40A N-channel IGBT in an SMD-1 surface-mount package. It uses punch-through (PT) IGBT technology optimized for medium-frequency switching up to approximately 20kHz. The low VCE(sat) of 2.1V at 40A minimizes conduction losses in motor drive and inverter applications. The IGBT combines the voltage-driven gate of a MOSFET with the low forward drop of a bipolar transistor. The SMD-1 package provides surface-mount capability while maintaining good thermal performance.

The FGH40T120SMD is an N-channel IGBT combining a MOSFET input with a PNP bipolar output. When VGE exceeds the threshold (4.5-6.5V), the MOSFET channel conducts, providing base current to the PNP transistor which amplifies the current. During turn-off, the MOSFET channel stops immediately, but PNP stored charge causes a current tail (140ns typical fall time). Punch-through technology uses an N+ buffer layer to limit the electric field, allowing a thinner drift region and lower VCE(sat).

• AC motor drive inverter (3-phase, 380-690V input)
• Solar string inverter power stage (up to 1000V DC bus)
• Welding machine inverter converter
• Uninterruptible power supply (UPS) switching stage
• Induction heating and induction cooking