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DMN2009LSS


20V N 沟道 MOSFET、12A、8mΩ@10V、9mΩ@4.5V、SO-8、2W、DC-DC/负载开关

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制造商零件:

DMN2009LSS

包装:

SO-8(5.0 x 4.0 x 1.5 毫米,1.27 毫米间距,鸥翼型)

品牌:
产品类别:
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说明

Diodes Incorporated 的 DMN2009LSS 是一款 20 V N 沟道增强型功率 MOSFET,采用 8 引脚 SO-8 封装。主要规格包括 20 V 漏极-源极电压、12 A 连续漏极电流、VGS = 10 V 时 8 mΩ 最大 RDS(on)、VGS = 4.5 V 时 9 mΩ、0.5-1.2 V 阈值电压范围、4.5 V 时 16 nC 典型栅极电荷和 2 W 功率耗散。该器件采用沟槽 MOSFET 技术,导通电阻超低。工作温度范围为 -55°C 至 +150°C (TJ)。后缀 LSS 表示 SO-8 封装。.

Diodes Incorporated 的 DMN2009LSS 是一款采用行业标准 SO-8 封装的单 N 沟道增强型功率 MOSFET。它具有 20 V 漏极-源极额定电压和 12 A 连续电流能力,主要针对高电流、低电压电源管理应用,包括直流-直流转换器、负载开关和电机驱动器。.

通过 Diodes 的沟槽 MOSFET 技术,在 VGS = 10 V 时实现了超低的 8 mΩ 最大 RDS(on)(4.5 V 时为 9 mΩ,2.5 V 时为 12 mΩ)。在 10 A 负载下,传导损耗仅为 0.8 W(8 mΩ × 10²A),完全符合 2 W 封装额定值,并有足够的 PCB 铜面积。.

0.5 V 的最小阈值电压确保器件可以由逻辑电平信号驱动,而 1.2 V 的最大阈值则保证了器件在 2.5 V 栅极驱动下的全面增强。如此宽的阈值范围意味着该器件在 2.5 V 和 5 V 栅极驱动下均能正常工作,不过在 4.5 V 及以上电压时,RDS(on)会明显降低。.

SO-8 封装在电流处理和 PCB 面积之间实现了良好的平衡。2 W 的额定功率耗散假定有足够的散热设计 - 通常在漏极引脚上浇注 1 平方英寸的铜,并在内部接地层上设置散热孔。.

DMN2009LSS 属于 Diodes 的 DMN20xx 系列 20 V N 沟道 MOSFET。相关器件包括 DMN2009USS(采用不同 SO-8 变体的相同芯片)和 DMN2016UTS(双 N 沟道版本)。后缀 -13 表示带卷封装。.

对于需要汽车认证的应用,Diodes 提供符合 AEC-Q101 标准的变体(后缀为 ‘Q’)。.

**DMN2009LSS 采用沟槽栅极技术,在硅片上蚀刻垂直沟槽,并在沟槽内形成栅极。这就在单位芯片面积上形成了非常大的沟道宽度,从而实现了超低的 8 mΩ RDS(on)。从源极(顶部)到漏极(底部)的垂直电流流经沟槽结构,实现了高效的电流处理。.

**栅极驱动注意事项:** 0.5-1.2 V 的阈值范围意味着该器件可以从逻辑电平驱动。在 VGS = 4.5 V 时,RDS(on) 最大值为 9 mΩ - 仅略高于 10 V 时。这种逻辑电平优化使该器件适合在负载开关应用中直接驱动 MCU GPIO。在 VGS = 2.5 V 时,RDS(on) 增加到 12 mΩ,对于大多数应用来说仍然很低。.

**SO-8 封装的散热设计:** SO-8 封装主要通过漏极引线(单 MOSFET 配置的引脚 5-8)向 PCB 铜板散热。环境温度为 25°C 时的额定功率为 2 W,漏极焊盘上需要大约 1 平方英寸的 1 盎司铜。要实现更高的散热,连接到内部铜平面的散热孔可以改善散热性能。.

**在同步整流器应用中,该二极管在高压侧和低压侧开关转换之间的死区时间内导通。.

针脚 名称 类型 说明
1 资料来源 P/G 源极;通常与地相连,用于低端开关;12A 连续电流路径;体二极管阳极
2 资料来源 P/G 源极(与引脚 1 平行);两个源极引脚必须在 PCB 上连接在一起;减少寄生电感
3 资料来源 P/G 源极(与引脚 1、2 并联);三个源极引脚可减少封装电阻和电感
4 大门 I 栅极输入;VGS(th) 0.5-1.2V;VGS 最大值 ±12V;16nC 栅极 charge@4.5V;使用低阻抗驱动器驱动,实现快速开关;串联栅极电阻器控制压摆率
5 排水 O 漏极;20V 最大 VDS;12A 连续电流;8mΩ RDS(on)@10V;连接至负载或电感器;主要热通路至 PCB
6 排水 O 漏极(与引脚 5 平行);焊接到带散热孔的铜浇注上
7 排水 O 漏极(与引脚 5、6 并行);三个漏极引脚可降低电阻并提供热路径
8 排水 O 漏极(与 5-7 引脚并联);PCB 上所有四个漏极引脚必须连接在一起
应用 说明
同步降压转换器低压侧 5V/12V 输入降压转换器中的低压侧同步整流器;9mΩ@4.5V,最大限度地降低了传导损耗;12A 额定电流涵盖 10A 以上的设计;16nC Qg 可实现 300-500kHz 的开关频率;与互补 P-ch 或 N-ch 高压侧配对使用
大电流负载开关 用于 5V/12V 子系统的低压侧负载开关;MCU GPIO 以 3.3-5V 电压驱动栅极;12A 容量可处理多个负载;9mΩ RDS(on) 在 10A 电流下提供 <100mV 压降;SO-8 提供良好的散热性
模型 制造商 兼容性 主要区别
DMN2009USS 二极管公司 包装变体 相同的芯片和规格,不同的 SO-8 变体;替换前请确认引脚输出的兼容性
IRLR3705ZPBF 英飞凌 竞争性替代方案 20V N-ch;15A;7mΩ@10V;D-Pak (TO-252);更高电流;通孔片,散热更好;需要更高的电流时使用
si4486ady-t1-ge3 Vishay 功能等效 20V N-ch;11.6A;8.5mΩ@10V;SO-8;规格相似;源自 Vishay 的替代品
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