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BSS138-7-F

50V N-ch MOSFET, 200mA, 3.5Ω Rds, low Vth 1.5V, SOT-23-3

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制造商零件：

BSS138-7-F

包装：

SOT-23-3 (TO-236-3, 2.9 x 1.3 x 1.0mm, surface mount)

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说明

产品概览

The BSS138-7-F is a 50V N-channel logic-level enhancement-mode MOSFET from Diodes Incorporated with 200mA drain current, 3.5Ω RDS(on), and low gate threshold (1.5V max) in a SOT-23-3 package.

主要规格

VDS (Drain-Source Voltage) 50V
ID (Continuous Drain Current) 200mA @ TA=25°C
RDS(on) Max 3.5Ω @ VGS=10V, ID=220mA
RDS(on) Max (4.5V) 6.0Ω @ VGS=4.5V
VGS(th) (Gate Threshold) 0.8V to 1.5V @ ID=1mA
VGS (Gate-Source Voltage) ±20V max
Qg (Total Gate Charge) 1.7nC typical @ VGS=10V
Ciss (Input Capacitance) 27pF typical @ VDS=25V
gfs (Forward Transconductance) 100mS typical
功率耗散 360mW @ TA=25°C
RθJA 350°C/W
工作温度 -55°C 至 +150°C
包装 SOT-23-3 (2.9 x 1.3mm, surface mount)

特点

  • 50V N-channel enhancement-mode MOSFET
  • Low gate threshold voltage: 1.5V max
  • Directly drivable from 2.5V/3.3V MCU GPIO
  • Low on-resistance: 3.5Ω max at VGS=10V
  • Fast switching: 2.5ns turn-on delay typical
  • Pb-free and halogen-free
  • Industry-standard SOT-23-3 footprint

应用

  • I2C/SPI level shifting (bidirectional)
  • Low-voltage logic switching
  • Load switch for battery-powered devices
  • Small servo motor control
  • MOSFET gate driver pre-driver

The BSS138-7-F from Diodes Incorporated is a 50V N-channel logic-level enhancement-mode MOSFET specifically designed for low-voltage switching applications. The key differentiator is the low gate threshold voltage (0.8V to 1.5V), which allows the device to be fully turned on by 3.3V or even 2.5V MCU GPIO pins without level translation. At VGS=4.5V, RDS(on) is 6Ω max, and at VGS=10V, it drops to 3.5Ω max. The 200mA continuous current rating covers typical I2C pull-up, LED indicator, and small relay loads. The SOT-23-3 package occupies minimal board area. The BSS138 is the industry-standard choice for bidirectional I2C level-shifter circuits, where two MOSFETs and pull-up resistors translate between 3.3V and 5V logic domains. The -7-F suffix denotes tape-and-reel packaging with Pb-free finish.

The BSS138-7-F operates as an enhancement-mode N-channel MOSFET. The low gate threshold voltage (0.8V typical, 1.5V max) means the channel begins to form at very low VGS. At VGS = 2.5V (low-voltage MCU output), the device is partially enhanced and can pass tens of milliamps with moderate RDS(on). At VGS = 3.3V, the device is more fully enhanced, and at VGS = 5V or 10V, it is fully enhanced with minimum RDS(on). The most common application is the bidirectional I2C level shifter: two BSS138 MOSFETs connect a 3.3V I2C bus to a 5V I2C bus. The gate is tied to the lower voltage (3.3V), and each side has pull-up resistors to its respective supply. When neither side pulls the line LOW, both FETs are off (VGS ≈ 0V since source = gate voltage). When the 3.3V side pulls LOW, the MOSFET’s body diode conducts, pulling the 5V side LOW through the channel. When the 5V side pulls LOW, the VGS exceeds the threshold (3.3V gate – ~0V drain), the MOSFET turns on, and the 3.3V side is pulled LOW. This bidirectional translation works without any direction control signal.

针脚 名称 类型 说明
1 大门 输入 Gate control terminal. Low-threshold N-channel MOSFET with VGS(th) = 0.8-1.5V, making it suitable for 2.5V-3.3V logic level shifting. The K suffix version includes ESD protection on the gate. Gate leakage current is typically 10nA. Maximum VGS = ±20V.
2 资料来源 功率输出 Source terminal. In level-shifting applications, connects to the lower-voltage side (e.g., 3.3V logic). Internal body diode conducts from Source to Drain. Continuous drain current is 220mA at TC=25°C. On-resistance RDS(on) = 3.5Ω max at VGS=10V, ID=50mA.
3 排水 功率输出 Drain terminal. In level-shifting applications, connects to the higher-voltage side (e.g., 5V logic) through a pull-up resistor. Maximum VDS = 50V. Open-drain configuration allows bidirectional level shifting between two voltage domains with a single device and two pull-up resistors.

BSS138K-7 pin assignment (SOT-23-3, top view): Pin 1 (left) = Gate, Pin 2 (center, tab) = Source, Pin 3 (right) = Drain. The K suffix indicates ESD-protected gate variant. This is the industry-standard MOSFET for I2C/SPI bidirectional level shifting between 1.8V/2.5V/3.3V/5V logic domains. For higher current switching, SI2302CDS offers 2.2A with 62mΩ RDS(on) in the same SOT-23-3 package.

  • I2C Level Shift: Two BSS138 + 4 pull-ups create bidirectional 3.3V-to-5V I2C translator; low Vth ensures conduction at 3.3V
  • 2.5V GPIO Switch: Low 1.5V threshold allows 2.5V MCU to drive gate; switches <50mA loads directly
  • Battery Load Switch: 0.5µA max gate leakage preserves battery; EN pin of MCU toggles VGS
  • Servo Control: 200mA rating drives small hobby servo signal lines; gate from MCU PWM pin
  • Gate Pre-Driver: Fast 2.5ns turn-on drives larger power MOSFET gates; reduces MCU drive requirement
模型 制造商 主要区别 包装 Specs
BSS138LT1G onsemi Same function, onsemi version, SOT-23-3 - -
2N7002K-7 二极管公司 60V/380mA, higher Vth (2.5V), ESD protected - -
BSS138PW Nexperia Same in TSSOP-6 (SOT-363) smaller package - -
2N7002ET1G onsemi 60V/300mA, higher voltage, similar low-Vth - -
NTR4003NT1G onsemi 30V/500mA, lower Rds, logic-level, SOT-23-3 - -

BSS138-7-F is a 50V/220mA N-channel MOSFET from onsemi in SOT-23-3 with 3.5Ω RDS(on). The BSS138K-7 provides ESD-protected gate. The 2N7002K-7 from onsemi offers 60V/300mA with 1.2Ω and ESD protection. The SI2302CDS from Vishay provides 20V/2.2A with 62mΩ for higher current. The DMN2075U from Diodes Inc offers 20V/750mA with 90mΩ. For level-shifting, BSS138 remains the industry standard for I2C bidirectional shifting. The AO3400A from Alpha & Omega provides 30V/5A with 26mΩ in the same SOT-23.

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