Productos
The BSS138-7-F is a 50V N-channel logic-level enhancement-mode MOSFET from Diodes Incorporated with 200mA drain current, 3.5Ω RDS(on), and low gate threshold (1.5V max) in a SOT-23-3 package.
Especificaciones
| VDS (Drain-Source Voltage) | 50V |
| ID (Continuous Drain Current) | 200mA @ TA=25°C |
| RDS(on) Max | 3.5Ω @ VGS=10V, ID=220mA |
| RDS(on) Max (4.5V) | 6.0Ω @ VGS=4.5V |
| VGS(th) (Gate Threshold) | 0.8V to 1.5V @ ID=1mA |
| VGS (Gate-Source Voltage) | ±20V max |
| Qg (Total Gate Charge) | 1.7nC typical @ VGS=10V |
| Ciss (Input Capacitance) | 27pF typical @ VDS=25V |
| gfs (Forward Transconductance) | 100mS typical |
| Power Dissipation | 360mW @ TA=25°C |
| RθJA | 350°C/W |
| Temperatura de funcionamiento | -55°C to +150°C |
| Paquete | SOT-23-3 (2.9 x 1.3mm, surface mount) |
Características
- 50V N-channel enhancement-mode MOSFET
- Low gate threshold voltage: 1.5V max
- Directly drivable from 2.5V/3.3V MCU GPIO
- Low on-resistance: 3.5Ω max at VGS=10V
- Fast switching: 2.5ns turn-on delay typical
- Pb-free and halogen-free
- Industry-standard SOT-23-3 footprint
Aplicaciones
- I2C/SPI level shifting (bidirectional)
- Low-voltage logic switching
- Load switch for battery-powered devices
- Small servo motor control
- MOSFET gate driver pre-driver