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IS42S16160J-7TLI

256Mbit SDR SDRAM, 16Mx16, 143MHz, 3.3V, LVTTL, 54-TSOP-II, Industrial

11162

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Pieza del fabricante：

IS42S16160J-7TLI

Paquete：

54-TSOP-II (22.22 x 10.16 x 1.0 mm)

Descripción

Productos

The IS42S16160J-7TLI is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.

Especificaciones

Tipo de memoria	SDR SDRAM
Densidad	256Mbit (32MB)
Organization	16M x 16
Internal Banks	4
Interface	LVTTL (Parallel)
Max Clock Frequency	143 MHz (-7 speed grade)
Access Time	5.4 ns
Row Addressing	A0-A12 (8192 rows)
Column Addressing	A0-A8 (512 columns)
Tensión de alimentación	3.0V to 3.6V (3.3V Typ)
Programmable CAS Latency	2, 3 clocks
Programmable Burst Length	1, 2, 4, 8, Full Page
Burst Sequence	Sequential / Interleave
Refresh	8K cycles / 64ms (Com/Ind/A1)
Temperatura de funcionamiento	-40 C to +85 C (Industrial)
Paquete	54-TSOP-II (10.16mm width)
Estado de las piezas	Production

Características

256Mbit SDR SDRAM organized as 16M x 16; 143MHz/166MHz maximum clock frequency; 4 internal banks for concurrent operation; Single 3.3V +/- 0.3V power supply; LVTTL-compatible inputs and outputs; Programmable CAS latency (2, 3 clocks); Programmable burst length (1, 2, 4, 8, full page); Programmable burst sequence (sequential/interleave); Auto precharge function; Auto refresh (CBR); Self refresh mode; All signals referenced to positive clock edge; 54-TSOP-II and 54-BGA package options

Aplicaciones

Embedded systems main memory; Industrial control and automation; Networking equipment buffer memory; Consumer electronics; Set-top boxes and digital TVs; Data logging systems; Video frame buffering; Communication equipment

Introducción del producto:IS42S16160J-7TLI Presentación del producto

The IS42S16160J-7TLI from ISSI is a 256Mbit SDR SDRAM organized as 16M x 16 bits, providing 32MB of synchronous DRAM in a 54-TSOP-II package. The device operates at a maximum clock frequency of 143MHz with 5.4ns access time, suitable for mid-range embedded and industrial memory applications. The quad-bank architecture enables concurrent operation by allowing one bank to be precharged while another is being accessed, hiding precharge latency for sustained throughput. Each of the four 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. The device supports programmable CAS latency of 2 or 3 clocks and programmable burst lengths including 1, 2, 4, 8, and full page modes. The -7TLI designation indicates the 143MHz speed grade (7ns tCK), industrial temperature range (-40C to +85C), TSOP-II package with matte tin (Sn) leads, and industrial grade qualification. This device is also available in a 54-ball TF-BGA (8x13mm) package for space-constrained applications.

Principio de funcionamiento:IS42S16160J-7TLI Principio de funcionamiento

The IS42S16160J-7TLI operates as a synchronous dynamic RAM where all input signals are registered on the positive edge of the system clock (CLK). The memory array consists of four independent banks, each containing 4M words of 16 bits. Access begins with an ACTIVE command that latches the bank select (BA0-BA1) and row address (A0-A12) to activate a specific row in the selected bank. A subsequent READ or WRITE command provides the column address (A0-A8) with A10 controlling auto precharge. Data is transferred in burst mode starting at the selected column, continuing for the programmed burst length (1, 2, 4, 8, or full page) in either sequential or interleave order. The auto precharge feature initiates row precharge at the end of the burst, reducing the need for explicit PRECHARGE commands. The DQML and DQMH signals provide byte-level data masking during write operations and output enable/disable control during reads. Periodic refresh is required with 8192 cycles every 64ms, performed automatically via auto refresh (CBR) or maintained during low-power states via self refresh mode.

Descripción de la clavija:IS42S16160J-7TLI Definición y funciones de las clavijas

Pin	Nombre	Tipo	Función
A0-A12	Address Inputs	Entrada	Multiplexed address; row (A0-A12) during ACTIVE, column (A0-A8) during READ/WRITE
BA0, BA1	Bank Select	Entrada	Selects one of 4 internal banks
DQ0-DQ15	Data I/O	E/S	16-bit bidirectional data bus
CLK	System Clock	Entrada	Master clock; all inputs sampled on rising edge
CKE	Clock Enable	Entrada	Enables/disables CLK; controls power-down and self refresh entry
CS#	Chip Select	Entrada	Active-low chip select
RAS#	Command Input	Entrada	Row address strobe (command encoding with CAS#, WE#)
CAS#	Command Input	Entrada	Column address strobe (command encoding with RAS#, WE#)
WE#	Write Enable	Entrada	Write enable (command encoding with RAS#, CAS#)
DQML	Lower Byte Mask	Entrada	Masks DQ0-DQ7 during writes; enables/disables lower byte outputs
DQMH	Upper Byte Mask	Entrada	Masks DQ8-DQ15 during writes; enables/disables upper byte outputs

Application Scenarios:In which products and applications isIS42S16160J-7TLI usado

Embedded System Main Memory: Provides 32MB of SDR SDRAM for microcontrollers, FPGAs, and SoCs in industrial applications requiring moderate bandwidth at 143MHz.
Control industrial: Serves as working memory for PLCs and industrial automation controllers with reliable 3.3V SDR SDRAM interface.
Networking Buffer: Packet buffering in network equipment with quad-bank interleaving for sustained throughput during burst transfers.
Video Frame Buffer: Stores video frame data in display and imaging systems with 16-bit data bus for efficient pixel access.

Alternative Models:What chips are recommended as replacements for IS42S16160J-7TLI

Fabricante	Número de pieza	Paquete	Densidad	Notas
ISSI	IS42S16160J-7BLI	54-TFBGA	256Mbit	BGA package variant (8x13mm)
ISSI	IS42S16160J-6TLI	54-TSOP-II	256Mbit	166MHz speed grade
Alliance Memory	AS4C16M16SA-7TCN	54-TSOP-II	256Mbit	Pin-compatible alternative
Winbond	W9816G6KH-6	54-TSOP-II	256Mbit	Industry-standard alternative