产品概览
The BSP170PH6327XTSA1 from Infineon Technologies is a P-Channel SIPMOS small signal MOSFET in a SOT-223 package, rated for -60 V drain-source voltage and -1.9 A continuous drain current. With a maximum RDS(on) of 300 mΩ at VGS = -10 V and AEC-Q101 qualification, it is designed for automotive and industrial switching applications requiring reliable P-channel operation.
主要规格
| VDS (max) | -60 V |
| ID (continuous, 25°C) | -1.9 A |
| RDS(on) max @ VGS = -10 V | 300 mΩ |
| VGS(th) range | -2.1 V to -4 V |
| QG (typ @ 10 V) | -10 nC |
| Ciss (typ) | 328 pF |
| 功率耗散 | 1.8 W |
| 工作温度 | -55°C 至 +150°C |
| 包装 | SOT-223 (PG-SOT223-4) |
| 资格 | AEC-Q101 |
特点
- Enhancement mode P-Channel MOSFET
- Avalanche rated for robustness
- Fast switching with dv/dt rating
- Pb-free lead plating, halogen-free
- AEC-Q101 qualified, PPAP capable
- Low RDS(on) for high efficiency
应用
- Automotive body control units
- LED lighting drivers
- SMPS secondary side rectification
- Motor control in automotive pumps and fans
- Load switches and reverse polarity protection