نظرة عامة على المنتج
The BSP170PH6327XTSA1 from Infineon Technologies is a P-Channel SIPMOS small signal MOSFET in a SOT-223 package, rated for -60 V drain-source voltage and -1.9 A continuous drain current. With a maximum RDS(on) of 300 mΩ at VGS = -10 V and AEC-Q101 qualification, it is designed for automotive and industrial switching applications requiring reliable P-channel operation.
المواصفات الرئيسية
| VDS (max) | -60 V |
| ID (continuous, 25°C) | -1.9 A |
| RDS(on) max @ VGS = -10 V | 300 mΩ |
| VGS(th) range | -2.1 V to -4 V |
| QG (typ @ 10 V) | -10 nC |
| Ciss (typ) | 328 pF |
| تبديد الطاقة | 1.8 W |
| درجة حرارة التشغيل | -55 درجة مئوية إلى +150 درجة مئوية |
| الحزمة | SOT-223 (PG-SOT223-4) |
| المؤهلات | AEC-Q101 |
الميزات
- Enhancement mode P-Channel MOSFET
- Avalanche rated for robustness
- Fast switching with dv/dt rating
- Pb-free lead plating, halogen-free
- AEC-Q101 qualified, PPAP capable
- Low RDS(on) for high efficiency
التطبيقات
- Automotive body control units
- LED lighting drivers
- SMPS secondary side rectification
- Motor control in automotive pumps and fans
- Load switches and reverse polarity protection