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TSAL6100

940 nm high-power IR LED, 130 mW/sr, +/-10 deg, T-1 3/4 through-hole, GaAlAs/GaAs

6200

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Manufacturer Part：

TSAL6100

Package：

T-1 3/4 (5 mm, Radial, Through-Hole)

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Description

Product Overview

The TSAL6100 from Vishay Semiconductors is a high power infrared emitting diode in GaAlAs/GaAs technology with a peak wavelength of 940 nm. Packaged in a T-1 3/4 (5 mm) through-hole package, it delivers high radiant intensity of 130 mW/sr typical at 100 mA with a narrow +/-10 degree half-angle for directed IR transmission.

Key Specifications

Peak Wavelength 940 nm
Radiant Intensity 130 mW/sr typical @ 100 mA
Radiant Power 35 mW typical @ 100 mA
Forward Voltage 1.35 V typical, 1.6 V max @ 100 mA
Half Intensity Angle +/-10 degrees
Max Forward Current 100 mA (continuous)
Rise/Fall Time 800 ns
Operating Temperature -40°C to 85°C

Features

  • High radiant power and radiant intensity for extended range
  • Peak wavelength 940 nm for minimal visible glow
  • Narrow +/-10 degree emission angle for directed transmission
  • Low forward voltage (1.35 V typical)
  • Suitable for high pulse current operation (up to 1.5 A surge)
  • Good spectral matching with Si photodetectors
  • Halogen-free per IEC 61249-2-21
  • RoHS compliant

Applications

  • IR remote controls for high power requirements
  • Free air transmission systems and light barriers
  • Optical counters and card readers
  • IR source for smoke detectors

The TSAL6100 is a high-power infrared emitting diode from Vishay Semiconductors, fabricated in GaAlAs/GaAs multi-quantum-well (MQW) technology. It emits at a peak wavelength of 940 nm, which is nearly invisible to the human eye, making it ideal for remote control and free-space optical communication applications. The device delivers a typical radiant intensity of 130 mW/sr at 100 mA forward current, with a total radiant power of 35 mW. The narrow emission angle of +/-10 degrees concentrates the infrared energy for extended-range directed transmission. The T-1 3/4 (5 mm diameter) through-hole package provides reliable mechanical mounting and excellent optical characteristics. The low forward voltage of 1.35 V at 100 mA enables efficient operation from low-voltage supplies. The TSAL6100 also supports high pulse current operation up to 1.5 A for short durations, making it suitable for high-power burst-mode IR transmission protocols.

The TSAL6100 operates as a forward-biased pn junction in GaAlAs/GaAs semiconductor material: (1) When current flows through the junction in the forward direction, electrons recombine with holes in the active region. In GaAlAs/GaAs MQW structures, this recombination releases energy as photons at a wavelength determined by the bandgap of the active layer, which is 940 nm for this device. (2) The photon emission is isotropic from the junction, but the molded lens of the T-1 3/4 package focuses the emission into a narrow beam with a half-intensity angle of +/-10 degrees, concentrating the radiant intensity to 130 mW/sr. (3) The radiant power is proportional to the forward current, allowing the device to be modulated by varying the drive current. At high pulse currents (up to 1.5 A), the radiant intensity increases to approximately 650 mW/sr, enabling long-range transmission. The rise and fall times of 800 ns support modulation frequencies up to several hundred kHz for standard IR remote control protocols.

Pin No. Pin Name Function
1 Anode Positive terminal; connect to supply through current-limiting resistor
2 Cathode Negative terminal; connect to ground or driver transistor collector
  • IR remote control units for consumer electronics (TVs, air conditioners) requiring extended operating range with narrow beam
  • Free-space optical transmission systems and IR light barriers for object detection and counting
  • Smoke detector IR sources where high radiant power and 940 nm wavelength ensure reliable particle detection
  • Optical card readers and encoders using directed IR beams for position sensing
Model Brand Wavelength Intensity Angle
TSAL6400 Vishay 940 nm 40 mW/sr +/-30 deg
TSHF6410 Vishay 870 nm 80 mW/sr +/-20 deg
SFH 4550 ams-OSRAM 860 nm 700 mW/sr +/-3 deg
VSLB3940 Vishay 940 nm 50 mW/sr +/-20 deg
TSAL6200 Vishay 940 nm 35 mW/sr +/-17 deg
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Email: info@materialparts.com

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Service & Packaging

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Contact Information

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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