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BYM13-40-E3/96

1A 40V Schottky rectifier diode, 0.55V VF, 40A surge, SMB (DO-214AA)

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Manufacturer Part：

BYM13-40-E3/96

Package：

SMB (DO-214AA, 5.3 x 3.6 x 2.3mm)

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Description

Product Overview

The BYM13-40-E3/96 from Vishay is a 1A, 40V Schottky rectifier diode in an SMB (DO-214AA) package. With a low forward voltage of 0.55V at 1A and 40A surge current capability, it is designed for high-efficiency rectification and freewheeling in low-voltage switching power supplies.

Key Specifications

Reverse Voltage (VR) 40V
Forward Current (IF) 1A
Forward Voltage (VF) 0.55V (typ) @IF=1A
Reverse Current (IR) 0.5mA (max) @VR=40V
Surge Current (IFSM) 40A (8.3ms sine)
Operating Temperature -65°C to +150°C
Package SMB (DO-214AA)

Features

  • Low 0.55V forward voltage for high rectification efficiency
  • 40A surge current rating for transient robustness
  • SMB (DO-214AA) surface-mount package for higher power than SMA
  • Schottky barrier for negligible reverse recovery time
  • Wide -65°C to +150°C operating temperature range
  • RoHS compliant and halogen-free options available

Applications

  • DC-DC converter output rectification
  • Freewheeling diode in buck regulator circuits
  • Reverse polarity and reverse current protection
  • Battery OR-ing and power path selection

The BYM13-40-E3/96 from Vishay is a 1A, 40V Schottky rectifier diode in an SMB (DO-214AA) surface-mount package. Its low 0.55V forward voltage drop at rated current minimizes power dissipation in rectification and freewheeling applications, improving overall power supply efficiency. The 40A surge current rating provides exceptional robustness against transient overloads. The Schottky barrier technology eliminates reverse recovery charge, making it ideal for high-frequency switching applications where conventional PN diodes would incur significant switching losses.

The BYM13-40-E3/96 uses a metal-silicon Schottky barrier junction. Unlike conventional PN junction diodes, the Schottky junction is formed by a metal contact on N-type silicon, which relies on majority carrier conduction. This eliminates minority carrier storage, resulting in negligible reverse recovery time and lower forward voltage drop (0.55V vs. 0.7-1.0V for PN diodes). When forward-biased, electrons flow from the semiconductor into the metal with minimal energy barrier. When reverse-biased, the junction blocks current with low leakage (0.5mA at 40V). The guard-ring structure around the active area prevents edge breakdown and enhances ESD tolerance.

Pin Name Description
Cathode K Cathode terminal (band marked)
Anode A Anode terminal
  • DC-DC buck and forward converter output rectification
  • Freewheeling diode in motor drive and solenoid circuits
  • Reverse polarity protection for battery-powered devices
  • Redundant power supply OR-ing diode
Model Manufacturer VR IF VF
SS14-E3/61T Vishay 40V 1A 0.50V
1N5819 onsemi 40V 1A 0.60V
SB140-E3 Vishay 40V 1A 0.55V
MBR140SFT1G onsemi 40V 1A 0.50V
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Contact Information

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Tel / WhatsApp: +86 13760382860

Service & Packaging

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Contact Information

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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