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SUP53P06-20-E3

P-ch 60V 20A MOSFET, 20mOhm RDS(on), D2PAK, load switch and power management

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Manufacturer Part：

SUP53P06-20-E3

Package：

D2PAK / TO-263-3 (10.4 x 9.35 x 4.6mm)

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Description

Product Overview

The SUP53P06-20-E3 from Vishay Siliconix is a P-channel power MOSFET rated at -60V VDS and -20A ID with low 20mOhm RDS(on) at VGS=-10V. Designed for load switching and power management in a D2PAK (TO-263) package.

Key Specifications

VDS (Max) -60V
ID (Continuous, TC=25C) -20A
RDS(on) Max @ VGS=-10V 20 mOhm
RDS(on) Max @ VGS=-4.5V 30 mOhm
VGS(th) -1.0V to -3.0V
Qg (Typical) 48 nC
PD (TC=25C) 62.5W
Operating Temperature -55 to 175 C
Package D2PAK (TO-263-3)

Features

  • Low 20mOhm RDS(on) for high-efficiency switching
  • -60V drain-source voltage rating
  • Logic-level gate threshold (-1.0 to -3.0V)
  • 100% avalanche tested
  • Trench MOSFET technology

Applications

  • Battery disconnect switches
  • Load switching and power routing
  • Reverse polarity protection
  • Motor H-bridge drivers
  • Power supply OR-ing

The SUP53P06-20-E3 from Vishay Siliconix is a P-channel trench MOSFET rated at -60V and -20A with 20mOhm maximum on-resistance at -10V gate drive. The low RDS(on) and high current capability make it ideal for battery disconnect switches, load switching, and reverse polarity protection in automotive and industrial systems. The D2PAK package provides excellent thermal dissipation (62.5W at TC=25C) and is suitable for high-power surface-mount applications. Logic-level gate threshold (-1.0 to -3.0V) enables direct drive from 3.3V or 5V microcontrollers.

The SUP53P06-20-E3 operates as a P-channel enhancement-mode power MOSFET using Vishay’s trench technology. **P-Channel Operation**: Unlike N-channel MOSFETs, the P-channel device turns ON when the gate is pulled below the source (negative VGS for P-ch). This makes it naturally suited for high-side switching – the MOSFET sits between the supply and the load, and a logic-low signal turns it ON. **Low RDS(on)**: Trench gate technology creates vertical channels with high cell density, achieving 20mOhm on-resistance. This minimizes conduction losses (I2R) during load switching. **Body Diode**: The intrinsic body diode between drain and source can conduct reverse current, which is useful in applications like reverse polarity protection where the diode blocks current in the wrong direction. **High-Side Switch**: P-channel MOSFETs are preferred for high-side switching because they don’t require a gate voltage above the supply rail (unlike N-channel high-side switches that need bootstrapped gate drive). A simple logic-level signal referenced to the supply rail controls the switch.

Pin Name Description
1 Gate Gate control terminal
2 Drain Drain terminal (connected to tab)
3 Source Source terminal
Tab Drain Thermal tab, electrically connected to Drain
  • Battery Disconnect: High-side switch for Li-ion battery pack disconnect in EVs and UPS
  • Reverse Protection: P-channel MOSFET as ideal diode for reverse polarity protection
  • Load Switch: Power routing between multiple supply sources in battery-powered systems
  • Motor H-Bridge: P-channel high-side + N-channel low-side in half-bridge configurations
  • Power OR-ing: Redundant power supply selection using P-channel OR-ing MOSFETs
Model Manufacturer Key Difference
FQP27P06 onsemi -60V, -27A, 35mOhm, TO-220
IRFR5305TRPBF Infineon -55V, -17A, 30mOhm, DPAK
AOD4185 Alpha & Omega -40V, -50A, 7mOhm, D2PAK
SI4435DY-T1-E3 Vishay -30V, -8.2A, 20mOhm, SO-8
FDS4559 onsemi -30V, -12A, 12mOhm, SO-8
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