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H57V2562GTR-75C

256Mb SDRAM, 4Mx4Banksx16, 133MHz, CL3, 3.3V, TSOP-II-54, discontinued

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Manufacturer Part：

H57V2562GTR-75C

Package：

TSOP-II 54-pin

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Description

Product Overview

The H57V2562GTR-75C from SK Hynix (formerly Hynix Semiconductor) is a 256Mb (32MB) Synchronous DRAM organized as 4M x 4 Banks x 16-bit, operating at 133MHz (CL3) with 3.3V supply in a 54-pin TSOP-II package. This is a legacy SDRAM device, now discontinued by the manufacturer.

Key Specifications

  • Density: 256Mb (32MB)
  • Organization: 4M x 4Banks x 16-bit
  • Interface: LVTTL
  • Clock Frequency: 133MHz (7.5ns cycle time)
  • CL (CAS Latency): 3
  • Supply Voltage: 3.3V (±0.3V)
  • Refresh: 8192 cycles / 64ms (auto-refresh)
  • Self-Refresh: Supported
  • Burst Length: 1, 2, 4, 8, Full Page
  • Burst Type: Sequential / Interleave
  • Operating Temperature: 0°C ~ 70°C (commercial)
  • Package: TSOP-II 54-pin (0.8mm pitch)
  • Access Time: 5.4ns (tAC from clock)
  • Status: Discontinued by manufacturer

Features

  • Single 3.3V power supply
  • All inputs and outputs are LVTTL compatible
  • Programmable CAS latency (2 or 3)
  • Programmable burst length and type
  • Auto-refresh and self-refresh modes
  • 4 internal banks for interleaved operation
  • Byte-wise write via DQM masking

Applications

  • Embedded system main memory
  • Networking equipment buffer memory
  • Printer and scanner image buffer
  • Consumer electronics frame buffer
  • Legacy PC and industrial equipment replacement

The H57V2562GTR-75C from SK Hynix is a 256Mb Synchronous DRAM (SDRAM) device providing 32MB of volatile memory in a 16-bit wide data bus configuration. The -75 speed grade supports 133MHz clock frequency with CAS Latency 3, delivering up to 266MB/s peak bandwidth. The 4-bank architecture enables bank interleaving for improved effective bandwidth in sequential access patterns. The LVTTL interface operates at 3.3V, compatible with standard 3.3V logic families. This device was widely used in embedded systems, networking equipment, and consumer electronics in the early 2000s. Note: This product has been discontinued by SK Hynix and is available only from surplus stock or aftermarket suppliers.

The H57V2562GTR-75C uses the standard SDRAM protocol where all operations are synchronized to the positive edge of the system clock (CLK). Memory is organized into 4 independent banks, each containing 4096 rows by 512 columns of 16-bit words. A read operation begins with an ACTIVATE command (specifying bank and row address), followed by a READ command (specifying column address) after tRCD delay. Data appears on the DQ bus after CAS Latency (3 clock cycles). A PRECHARGE command closes the row before another row can be opened in the same bank. The 4-bank architecture allows overlapping operations: while one bank is being accessed, another can be precharged, hiding the precharge latency. Auto-refresh cycles through all 8192 rows every 64ms. Self-refresh mode allows the DRAM to maintain data without external refresh commands, reducing system power during sleep modes.

Pin Group Name Function
Address A0-A12 Row/column address (multiplexed)
Bank Select BA0, BA1 Bank selection (4 banks)
Data DQ0-DQ15 16-bit bidirectional data bus
Data Mask DQML, DQMH Byte-wise write masking
Control CS, RAS, CAS, WE Command inputs (active low)
Clock CLK, CKE System clock and clock enable
Power VDD, VSS 3.3V supply and ground

The H57V2562GTR-75C was widely used as main memory in embedded processors with 16-bit memory interfaces. In networking equipment, it served as packet buffer memory for routers and switches. For printers and scanners, the 32MB capacity stored compressed image data during processing. The 16-bit bus width pairs naturally with 16-bit DSPs and microcontrollers. This device is now primarily sourced as a replacement part for legacy equipment maintenance, as DDR SDRAM has replaced standard SDRAM in new designs.

Model Manufacturer Key Difference
MT48LC16M16A2-75 Micron 256Mb SDRAM, same specs, pin-compatible
W9812G6JH-75 Winbond 256Mb SDRAM, 133MHz, TSOP-II-54
IS42S16160B-7TL ISSI 256Mb SDRAM, 133MHz, active production
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