The SPW47N60CFD is an N-channel CoolMOS power MOSFET from Infineon in TO-247, rated at 650V VDSS, 47A ID, and 70mOhm RDS(on) at VGS=10V. CoolMOS is Infineon’s superjunction MOSFET technology that achieves low RDS(on) in high-voltage devices by using alternating p-type and n-type columns in the drift region, enabling charge compensation during the off-state. This reduces the drift region resistance by 5-10x compared to conventional planar MOSFETs at the same voltage rating. The CFD suffix indicates the device includes an integrated fast body diode with soft recovery (trr=200ns, Qrr=1.4uC), optimized for hard-switching applications like PFC boost converters and motor drives where the body diode conducts during dead-time. Without the fast diode, standard CoolMOS body diodes have trr of 500ns+ and can suffer from parasitic BJT turn-on during reverse recovery. The gate charge of 190nC requires a 2A gate driver for 95ns switching times. The device features: (1) Excellent avalanche capability (5.6mJ single pulse); (2) Low EMI due to controlled dV/dt during switching; (3) Repetitive avalanche rated for robustness. The TO-247 package provides 0.4C/W junction-to-case thermal resistance. Applications include: PFC boost stages, solar inverters, and EV charging stations.