Product Overview
The SI2305CDS-T1-GE3 from Vishay is a P-Channel TrenchFET power MOSFET rated at 8V VDS and 5.8A ID in a compact SOT-23-3 package. With an ultra-low on-resistance of 35mΩ at VGS=-4.5V and a gate charge of only 12nC, it is optimized for load switching and DC-DC conversion in portable and battery-powered applications.
Key Specifications
| Channel Type | P-Channel |
| Drain-Source Voltage (VDSS) | 8 V |
| Continuous Drain Current | 5.8 A (Tc) |
| On-Resistance (RDS(on)) | 35 mΩ @ VGS=-4.5V |
| Gate Charge (Qg) | 12 nC (typ) |
| Input Capacitance (Ciss) | 960 pF @ VDS=-4V |
| Gate-Source Voltage (VGS) | ±8 V |
| Power Dissipation | 960 mW (Ta), 1.7 W (Tc) |
| Operating Temperature | -55°C to +150°C |
| Package | SOT-23-3 |
Features
- TrenchFET power MOSFET technology
- Ultra-low on-resistance: 35mΩ @ VGS=-4.5V
- Low gate charge: 12nC typical
- Halogen-free per IEC 61249-2-21
- 100% Rg tested
- RoHS compliant
- MSL 1 (unlimited)
Applications
- Load switch for portable devices
- DC-DC converter
- Battery management circuits
- Power management in handheld devices