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IRFP3306PBF

60V N-ch StrongIRFET MOSFET, 3.3mOhm Ron, 120A, 220W, TO-247AC

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Manufacturer Part：

IRFP3306PBF

Package：

TO-247AC (15.87 x 5.31 x 20.7 mm)

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Description

Product Overview

The IRFP3306PBF from Infineon Technologies is a 60V N-channel StrongIRFET power MOSFET in a TO-247AC through-hole package. With 3.3mOhm typical on-resistance, 120A continuous drain current (package limited), and 220W power dissipation, it is optimized for low-frequency high-current applications such as DC motor drives and battery management systems.

Key Specifications

VDS 60 V
ID (Package Limited) 120 A @ TC=25C
ID (Silicon Limited) 160 A
RDS(on) Typical 3.3 mOhm @ VGS=10V
RDS(on) Maximum 4.2 mOhm @ VGS=10V
Gate Charge (QG) 85 nC typical @ 10V
Input Capacitance (Ciss) 4520 pF @ 50V
Power Dissipation 220 W @ TC=25C
VGS(th) 2.0 – 4.0 V
RthJC 0.67 C/W
Operating Temperature -55 to +175 C (TJ)
Package TO-247AC

Features

  • StrongIRFET family optimized for low RDS(on) and high current
  • 60V drain-source voltage rating
  • 3.3mOhm ultra-low on-resistance at VGS=10V
  • 120A package-limited continuous drain current
  • 85nC low gate charge for efficient switching
  • Enhanced body diode dV/dt and dI/dt capability
  • 100% avalanche tested and characterized
  • Lead-free (PbF) RoHS compliant

Applications

  • DC motor drives and battery management systems
  • Synchronous rectification in SMPS
  • DC-DC converters and inverters
  • Uninterruptible power supplies (UPS)

The IRFP3306PBF from Infineon Technologies is a 60V N-channel StrongIRFET power MOSFET in a TO-247AC through-hole package. The PBF suffix denotes lead-free RoHS-compliant packaging. Based on Infineon’s HEXFET technology, it features an ultra-low typical RDS(on) of 3.3mOhm at VGS=10V, making it ideal for high-current, low-voltage switching applications where conduction losses must be minimized. The silicon-limited continuous drain current rating is 160A, with a practical package-limited rating of 120A at TC=25C. The 220W power dissipation capability and 0.67C/W junction-to-case thermal resistance enable reliable operation in demanding thermal environments. The enhanced body diode with improved dV/dt and dI/dt ruggedness makes it suitable for synchronous rectification and half-bridge topologies.

The IRFP3306PBF operates as a voltage-controlled N-channel enhancement-mode MOSFET. (1) Enhancement-Mode Operation: With no gate-source voltage applied, the device is in the off-state (no drain current flows). When VGS exceeds the threshold voltage (2.0-4.0V), an inversion layer forms in the P-body region, creating a conductive channel between drain and source. At VGS=10V, the channel is fully enhanced, yielding the minimum RDS(on) of 3.3mOhm typical. (2) Vertical Structure: The HEXFET vertical DMOS structure features a dense array of parallel-connected MOSFET cells on the die, providing the low on-resistance and high current density. The TO-247AC package with its large copper tab provides excellent thermal conductivity from junction to heatsink. (3) Body Diode: An intrinsic PN junction body diode exists between source and drain. In synchronous rectification applications, this diode conducts during the dead-time before the MOSFET channel turns on. The enhanced body diode dV/dt capability ensures reliable commutation without parasitic bipolar turn-on. (4) Avalanche Operation: The device is 100% avalanche tested, meaning it can safely absorb energy from inductive transients that exceed the breakdown voltage, up to the rated single-pulse avalanche energy.

Pin Name Type Description
1 Gate Input Gate drive input (VGS max +/-20V)
2 Drain Power Drain terminal (connected to tab)
3 Source Power Source terminal
Tab Drain Power Drain (connected to pin 2, heatsink mount)
  • 48V battery management system with 3.3mOhm RDS(on) minimizing conduction losses at 100A load current
  • Synchronous rectification in high-current DC-DC converter with enhanced body diode dV/dt ruggedness
  • DC motor H-bridge drive with 120A continuous current and 620A pulsed current capability
  • UPS inverter stage with 220W power dissipation and 0.67C/W thermal resistance for heatsink design
Model Manufacturer VDS Ron Notes
IRFP3206PBF Infineon 55V 2.6mOhm Lower voltage, lower Ron
IRFP3703PBF Infineon 100V 6mOhm Higher voltage rating
IRFP4468PBF Infineon 100V 2.6mOhm Lower Ron at higher voltage
IPP034N20N5G Infineon 200V 3.4mOhm Higher voltage, PG-TO247
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