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IRF9540N

-100V P-CH MOSFET, -23A, 0.117Ω RDS(on), TO-220AB, avalanche rated

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Manufacturer Part：

IRF9540N

Package：

TO-220AB (3-pin, through-hole)

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Description

Product Overview

The IRF9540N from Infineon (formerly International Rectifier) is a -100V P-channel HEXFET power MOSFET in a TO-220AB package. With 0.117Ω max RDS(on) at VGS=-10V and -23A continuous drain current, it is designed for high-side switching, load management, and reverse polarity protection in industrial and automotive applications.

Key Specifications

Drain-Source Voltage (VDSS) -100V
Continuous Drain Current -23A (TC=25°C)
RDS(on) Max 0.117Ω (VGS=-10V)
Gate Threshold Voltage -2V to -4V
Power Dissipation 140W (TC=25°C)
Total Gate Charge 97nC (typical)
Input Capacitance 1300pF (typical)
Avalanche Energy 430mJ (single pulse)
Junction Temperature -55°C to +175°C
Package TO-220AB

Features

  • Fifth-generation HEXFET technology
  • Low RDS(on): 0.117Ω max
  • Fully avalanche rated
  • Fast switching speed
  • Dynamic dv/dt rating
  • 175°C operating junction temperature
  • Industry-standard TO-220 pinout

Applications

  • High-side load switching
  • Reverse polarity protection
  • DC motor control
  • Switching power supplies
  • Battery management systems

The IRF9540N from Infineon is a -100V P-channel power MOSFET in the industry-standard TO-220AB package. Utilizing fifth-generation HEXFET technology, it achieves extremely low on-resistance per silicon area, with RDS(on) of 0.117Ω maximum at VGS=-10V. The device is fully avalanche rated with 430mJ single-pulse energy capability. The -23A continuous drain current rating at TC=25°C and 140W power dissipation make it suitable for demanding power switching applications. As a P-channel device, it simplifies high-side switching circuits by eliminating the need for bootstrap charge pumps required by N-channel solutions.

The IRF9540N is a P-channel enhancement-mode MOSFET. Current flows from source to drain when the gate-to-source voltage is driven negative relative to the source, creating an inversion layer (channel) in the P-type body region that connects the P+ source and P-epi drain. The RDS(on) of 0.117Ω at VGS=-10V represents the total resistance of this channel plus the drift region and substrate. The body diode (inherent PN junction between body and drain) is forward-biased when VDS is positive, providing a natural freewheeling path for inductive loads. For high-side switching, the source connects to the positive supply rail and the gate is pulled below the source to turn ON. The gate requires only voltage drive once the input capacitance is charged.

Pin Name Type Description
1 Gate Input Gate control; drive negative relative to source to turn ON
2 Drain Power Drain terminal; connected to metal tab
3 Source Power Source terminal; connects to positive supply
  • High-Side Load Switching: Controls power to loads by pulling gate below supply rail, eliminating bootstrap circuitry required by N-channel solutions
  • Reverse Polarity Protection: Placed in positive supply path with gate tied to ground; during normal operation the body diode conducts and gate bias enhances the channel, while reverse polarity blocks the fault
  • DC Motor H-Bridge: Pairs with N-channel MOSFETs in half-bridge configurations for bidirectional motor control
Model Manufacturer VDSS ID Key Difference
IRF9540NPbF Infineon -100V -23A Lead-free version
FQP47P06 ONsemi -60V -47A Lower voltage, higher current
IRF9Z34N Infineon -55V -19A Lower voltage, lower RDS(on)
NDP6020P ONsemi -20V -24A Logic-level gate, low voltage
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