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FDN306P

P-channel MOSFET, -60V, -1.4A, 200mΩ RDS(ON), SOT-23 package for load switching and battery protection

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Manufacturer Part：

FDN306P

Package：

SOT-23 (3-pin)

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Description

Product Overview

The FDN306P from onsemi is a P-channel enhancement mode MOSFET in a SOT-23 surface mount package. It features a drain-source voltage of -60V, a continuous drain current of -1.4A, and a very low on-resistance of 200mΩ (max) at VGS = -10V, making it ideal for load switching and battery protection in portable electronics.

Key Specifications

Channel Type P-Channel Enhancement Mode
Drain-Source Voltage (VDSS) -60V
Continuous Drain Current (ID) -1.4A (at TC=25°C)
On-Resistance (RDS(ON)) 200mΩ max @ VGS=-10V
Gate Threshold Voltage (VGS(th)) -1V to -2.5V
Gate Charge (Qg) 8nC (typical)
Power Dissipation 1.0W (at TA=25°C)
Operating Temperature -55°C to +150°C
Package SOT-23 (3-pin)

Features

  • Low RDS(ON) of 200mΩ for efficient switching
  • Compact SOT-23 surface mount package
  • 60V drain-source voltage rating for battery and load applications
  • Low gate charge for fast switching
  • Pb-free and RoHS compliant
  • Suitable for logic-level gate drive

Applications

  • Battery charging/discharging switches
  • Load switching in portable devices
  • Power management in notebooks and tablets
  • Battery reverse polarity protection
  • DC-DC converter synchronous rectification

The FDN306P is a P-channel enhancement mode power MOSFET from onsemi, designed for low voltage load switching and battery management applications. The device utilizes onsemi’s high cell density DMOS technology to achieve a low on-resistance of 200mΩ maximum at VGS=-10V while maintaining fast switching speeds through low gate charge. The -60V drain-source voltage rating provides adequate margin for battery-powered systems where voltage spikes from inductive loads may occur. The compact SOT-23 package makes the FDN306P particularly suitable for space-constrained portable electronics such as smartphones, tablets, and wearable devices where efficient power management is critical.

The FDN306P is a P-channel enhancement mode MOSFET where current flows from source to drain when the gate voltage is pulled below the source voltage by more than the threshold voltage. The device uses a vertical DMOS structure where the gate electrode controls the formation of a conductive channel between the P+ source and the P-epi drain region. When VGS exceeds the threshold (becomes more negative than -1V to -2.5V), an inversion layer forms under the gate oxide, creating a low-resistance path for hole current flow. The low RDS(ON) minimizes conduction losses during the on-state, while the low gate charge ensures fast transition between on and off states, reducing switching losses in high-frequency applications.

Pin Name Description
1 G Gate; controls the MOSFET on/off state
2 S Source; connected to the positive supply in high-side switch applications
3 D Drain; connected to the load in high-side switch configurations
  • Battery Protection: Serves as high-side disconnect switch to prevent over-discharge or reverse current in Li-ion battery packs
  • Load Switch: Controls power delivery to subsystems in portable devices, enabling power sequencing and sleep mode operation
  • Reverse Polarity Protection: Placed between battery and system to block current flow if battery is inserted backwards
  • DC-DC Converter: Used as synchronous rectifier or high-side switch in buck and boost converter topologies
Model Manufacturer VDSS RDS(ON) Package
FDC6420P onsemi -60V 180mΩ SOIC-8
IRF9Z34NPBF Infineon -60V 100mΩ DPAK
SI2307DS Vishay -30V 80mΩ SOT-23
FDN304P onsemi -60V 300mΩ SOT-23
NTR4101PT1G onsemi -60V 150mΩ SOT-23
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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