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2N2905A

PNP switching transistor, -60V, -600mA, TO-39 metal can, MIL-qualified, 200MHz fT

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Manufacturer Part：

2N2905A

Package：

TO-39 Metal Can (9.4mm dia x 6.6mm)

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Description

Product Overview

The 2N2905A from onsemi is a PNP silicon small-signal switching transistor in a TO-39 metal can package. Rated at -60V VCEO and -600mA IC, it is designed for high-speed saturated switching and general-purpose amplifier applications with an fT of 200MHz.

Key Specifications

Polarity PNP
VCEO (Max) -60V
IC (Continuous) -600 mA
VCE(sat) Max -1.6V @ IC=-500mA
hFE (Min) 100 @ IC=-150mA, VCE=-10V
fT 200 MHz
PD (TC=25C) 3.0W
RthJC 50 C/W
Operating Temperature -65 to +200 C
Package TO-39 (Metal Can)

Features

  • MIL-PRF-19500/290 qualified for military applications
  • Available as JAN, JANTX, and JANTXV screened versions
  • High DC current gain: 100-300 at 150mA
  • Low saturation voltage: -0.4V at 150mA
  • Fast switching: 45ns turn-on, 100ns turn-off

Applications

  • High-speed saturated switching circuits
  • General-purpose low-power amplification
  • Darlington pair driver stages
  • Analog signal switching
  • Military and aerospace electronics

The 2N2905A from onsemi is a PNP silicon planar epitaxial transistor housed in a TO-39 metal can, designed for high-speed saturated switching and general-purpose amplifier applications. With a -60V collector-emitter voltage rating, -600mA continuous collector current, and transition frequency of 200MHz, it is suitable for a wide range of switching and amplification tasks. The device is MIL-PRF-19500/290 qualified and available in JAN, JANTX, and JANTXV screened versions for military and aerospace applications. DC current gain ranges from 100 to 300 at 150mA collector current.

The 2N2905A operates as a PNP bipolar junction transistor using current-controlled current amplification. **PNP Structure**: The emitter is P-type, base is N-type, and collector is P-type silicon. Conduction occurs when the base-emitter junction is forward-biased (base more negative than emitter for PNP), allowing majority carriers (holes) to flow from emitter through the thin base region to the collector. **Current Gain**: The hFE of 100-300 means that a small base current controls 100-300 times larger collector current. This amplification makes the device useful as a switch (saturated operation) or linear amplifier. **Switching Operation**: In saturated switching, the transistor is driven hard into saturation (VCE drops to -0.4V at 150mA), acting as a closed switch. Turn-on time is 45ns and turn-off time is 100ns, enabling high-speed switching. **Thermal Considerations**: The TO-39 metal can provides better thermal dissipation (RthJC=50C/W) than plastic packages, allowing 3W dissipation at TC=25C. The 200C maximum junction temperature provides wide thermal margin.

Pin Name Description
1 Emitter Emitter terminal
2 Base Base terminal (control input)
3 Collector Collector terminal (connected to case)
  • Military Electronics: Qualified switching and amplification in defense communication and radar systems
  • Power Switching: Low-side PNP switch for relay and solenoid driving from negative rails
  • Complementary Pair: Paired with 2N2219A (NPN) for push-pull amplifier output stages
  • Darlington Drivers: Pre-driver stage in high-current Darlington configurations
  • Level Shifting: PNP current mirror and level-shifting circuits in analog design
Model Manufacturer Key Difference
2N2907A onsemi PNP, TO-18 package, same electrical specs
2N3906 onsemi PNP, -40V, -200mA, TO-92, lower cost
BC557B Nexperia PNP, -45V, -100mA, TO-92, general purpose
MPS2907A onsemi PNP, -60V, -600mA, SOT-89, surface mount
PZT2907A Diodes Inc PNP, -60V, -800mA, SOT-223, higher current
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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