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NUP1301

Dual NPN Transistor Array, 50V, 100mA, SOT-363

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Pieza del fabricante：

NUP1301

Paquete：

SOT-363 / SC-88 (2.0 x 1.25 x 0.9 mm)

Marca：
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Descripción

Productos

The NUP1301 from onsemi is a dual NPN general-purpose transistor array in an SOT-363 (SC-88) package, designed for low-power switching and amplifier applications.

Especificaciones

Tipo Dual NPN General-Purpose Transistor Array
Polarity NPN
VCEO 50 V
IC (max) 100 mA per transistor
hFE (min) 100 @ IC=2mA
ft 300 MHz (typical)
Paquete SOT-363 (SC-88 / 6-TSSOP)
Temperatura de funcionamiento -55C to +150C (TJ)

Características

  • Two matched NPN transistors in one package
  • 50V VCEO rating
  • 100 mA per transistor
  • 300 MHz transition frequency
  • Tiny SOT-363 package (2.0 x 1.25 mm)

Aplicaciones

  • Differential amplifier input pairs
  • Current mirror circuits
  • Low-power switching
  • General-purpose amplification

The NUP1301 from onsemi is a dual NPN general-purpose transistor array in a compact SOT-363 (SC-88) surface mount package. The two transistors are fabricated on the same die, ensuring close matching of VBE and hFE, which is critical for differential amplifier and current mirror applications. The 50V VCEO and 100mA IC ratings cover a wide range of low-power analog and digital switching applications. The 300 MHz transition frequency supports RF and high-speed switching. The tiny 2.0 x 1.25 mm footprint is ideal for space-constrained designs.

The NUP1301 contains two independent NPN bipolar junction transistors fabricated on the same silicon die using a planar epitaxial process. Being on the same die, the two transistors share the same thermal environment and process variations, resulting in closely matched parameters (VBE matching typically within 2 mV, hFE matching within 10%). This matching is exploited in differential amplifier input pairs where balanced gain and offset are required, and in current mirror circuits where the output current tracks the reference current. Each transistor operates as a standard NPN BJT: applying forward bias to the base-emitter junction injects minority carriers into the base, which are swept across the reverse-biased collector-base junction to produce collector current. The collector current is proportional to the base current, with the proportionality factor being the DC current gain (hFE, typically 100-300).

Pin Nombre Tipo Función
1 E1 Terminal Transistor 1 Emitter
2 B1 Terminal Transistor 1 Base
3 C2 Terminal Transistor 2 Collector
4 E2 Terminal Transistor 2 Emitter
5 B2 Terminal Transistor 2 Base
6 C1 Terminal Transistor 1 Collector
  • Differential amplifier input pair with matched VBE for precision circuits
  • Current mirror for bias current generation in analog ICs
  • Dual low-side switch for relay or LED drive
  • Push-pull driver for small motor control
Fabricante Número de pieza Paquete Notas
Nexperia BC847BV,215 SOT-363 Dual NPN, similar class
Diodos Inc MMBTA06-7-F SOT-363 Dual NPN, similar
onsemi MBT3904DW1T1G SOT-363 Dual NPN, 2N3904 equivalent
Nexperia BC847BS,235 SOT-363 Dual NPN, matched pair
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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