Productos
The NCE7560K from NCEPower is a 60 V N-channel enhancement-mode power MOSFET with 5.5 mOhm on-resistance and 75 A drain current in a TO-252 (DPAK) package. It uses advanced trench technology for low RDS(on) and is designed for high-efficiency switching applications in battery-powered and power management systems.
Especificaciones
| Tipo | N-Channel Enhancement Mode MOSFET |
| VDS | 60 V |
| VGS | ±20 V |
| RDS(on) (VGS=10V) | 5.5 mOhm (max) |
| RDS(on) (VGS=4.5V) | 7.0 mOhm (max) |
| Continuous Drain Current (TC=25°C) | 75 A |
| Gate Threshold Voltage | 1.0-2.5 V |
| Total Gate Charge | 68 nC (typical) |
| Power Dissipation (TC=25°C) | 100 W |
| Paquete | TO-252 (DPAK-3) |
| Temperatura de funcionamiento | -55°C to 150°C |
Características
- Advanced trench technology for ultra-low RDS(on)
- 5.5 mOhm maximum on-resistance at VGS=10V
- 75 A continuous drain current capability
- Low gate threshold voltage for logic-level drive
- Fast switching speed
- RoHS compliant
Aplicaciones
- Battery management and protection circuits
- DC-DC converter power stages
- Motor drive H-bridge applications
- Load switching in power distribution
- Inverter and UPS systems