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LSM115JE3/TR13

15V 1A Schottky barrier rectifier, 220mV VF, DO-214BA, guard ring protected

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Pieza del fabricante：

LSM115JE3/TR13

Paquete：

DO-214BA (SMB), 4.57 x 3.94 x 2.72 mm

Marca：
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Descripción

Productos

The LSM115JE3/TR13 from Microchip Technology is a 15V, 1A Schottky barrier rectifier in DO-214BA (SMB) surface-mount package, featuring ultra-low forward voltage of 220mV for high-efficiency power conversion.

Especificaciones

Tipo Schottky Barrier Rectifier
Reverse Voltage (VRRM) 15V
Forward Current (IF) 1A
Forward Voltage (VF) 220mV max @ 1A
Reverse Leakage (IR) 10mA @ 15V
Surge Current (IFSM) 50A
Junction Temperature -55 to +100 C
Paquete DO-214BA (SMB)

Características

  • Ultra-low forward voltage: 220mV @ 1A
  • Guard ring for overvoltage protection
  • Low power loss and high efficiency
  • High surge current capability: 50A
  • Surface-mount DO-214BA package

Aplicaciones

  • Low-voltage high-frequency power supplies
  • Reverse polarity protection
  • OR-ing diode in redundant power systems
  • Freewheeling diode in DC-DC converters

The LSM115JE3/TR13 from Microchip Technology is a 15V, 1A Schottky barrier rectifier designed for low-voltage, high-efficiency power conversion applications. Its ultra-low forward voltage drop of only 220mV at 1A significantly reduces conduction losses compared to standard silicon diodes, making it ideal for battery-powered and energy-sensitive applications. The device features a guard ring structure for overvoltage transient protection and a high non-repetitive surge current rating of 50A. The DO-214BA (SMB) surface-mount package with J-lead terminals provides reliable solder joints and efficient heat dissipation. The Schottky barrier construction eliminates minority carrier charge storage, enabling very fast switching with no reverse recovery time, which is essential for high-frequency DC-DC converter applications.

The LSM115JE3/TR13 operates as a majority-carrier device through a metal-semiconductor (Schottky) junction: (1) Forward bias conduction – When the anode voltage exceeds the cathode by more than the barrier potential (approximately 220mV), electrons from the N-type semiconductor cross the Schottky barrier into the metal contact. Unlike PN junction diodes, conduction occurs primarily through majority carriers (electrons), eliminating the charge storage associated with minority carrier injection. This results in the ultra-low forward voltage drop and near-zero reverse recovery time. (2) Reverse blocking – When the cathode voltage exceeds the anode, the Schottky barrier widens, preventing significant current flow. The guard ring structure around the Schottky junction provides controlled avalanche breakdown characteristics, protecting the device from voltage transients. (3) The 15V reverse voltage rating makes this device suitable for low-voltage applications where the minimal forward voltage drop is critical for efficiency, such as 5V and 3.3V power supply outputs.

Pin Nombre Función
1 Cátodo Cathode terminal (marked with band)
2 Ánodo Anode terminal
  • Low-voltage high-frequency power supply output rectification with 220mV forward voltage minimizing conduction losses
  • Reverse polarity protection in battery-powered devices using the 1A forward current and 15V reverse rating
  • OR-ing diode in redundant power systems requiring low voltage drop for hot-swap capability
  • Freewheeling diode in DC-DC converter circuits with zero reverse recovery time preventing switching losses
Modelo Fabricante Diferencia clave
LSM215JE3/TR13 Microchip 30V version, higher VF
SS12-E3/61T Vishay 20V/1A, SMA package
MBR1100RLG onsemi 100V/1A, higher voltage
SB120S1-TP Micro Commercial 20V/1A, SMA
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Tel / WhatsApp: +86 13760382860

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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