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IRF540PBF

100V N-ch power MOSFET, 33A, 44mOhm, TO-220, industry standard

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Pieza del fabricante：

IRF540PBF

Paquete：

TO-220AB (15.6 x 10.4 x 4.6 mm, through-hole, 3 leads + tab)

Marca：
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Descripción

Productos

The IRF540PBF from Infineon (formerly International Rectifier) is a 100V N-channel power MOSFET with 33A drain current and 44mOhm RDS(on) in a TO-220 through-hole package, one of the most popular general-purpose power MOSFETs.

Especificaciones

Tipo N-Channel Enhancement MOSFET
VDS 100V
VGS +/-20V
ID (Continuous) 33A (TC=25C)
RDS(on) @ 10V 44 mOhm (max)
RDS(on) @ 5V 52 mOhm (typ)
VGS(th) 2-4V
Qg (Total Gate Charge) 71 nC (typ @ 10V)
Ciss 1700 pF (typ)
gfs 29 S (typ)
Power Dissipation 150W (TC=25C)
Paquete TO-220AB (through-hole)
Temperatura de funcionamiento -55 to +175 C (TJ)

Características

  • Industry-standard 100V N-channel power MOSFET
  • 33A continuous drain current
  • 44mOhm max RDS(on) at VGS=10V
  • 150W power dissipation with proper heatsinking
  • Fast switching capability
  • Pb-free lead finish (PBF suffix)

Aplicaciones

  • Convertidores CC-CC
  • Motor drive and control
  • Switching power supplies
  • Load switches and inverters
  • Automotive and industrial power

The IRF540PBF from Infineon is one of the most widely used and recognized N-channel power MOSFETs in the electronics industry. Originally designed by International Rectifier (now part of Infineon), the IRF540 has been a go-to device for medium-voltage switching applications since the 1980s. With a 100V drain-source voltage rating, 33A continuous drain current, and 44mOhm maximum on-resistance at VGS=10V, the device provides a versatile balance of voltage, current, and conduction loss characteristics suitable for a wide range of power switching applications. The TO-220 through-hole package allows easy mounting to heatsinks for thermal management at power dissipation levels up to 150W (with proper heatsinking). The PBF suffix indicates Pb-free (lead-free) termination finish, complying with RoHS requirements. The device can be driven from 10V gate drive for minimum RDS(on), or from 5V logic with slightly increased on-resistance (52mOhm typical). The total gate charge of 71nC is manageable for most gate driver circuits at switching frequencies up to several hundred kHz. The IRF540 is commonly used in motor drivers, DC-DC converters, switching power supplies, and general-purpose power switching where a robust, affordable 100V MOSFET is needed. Its long production history ensures wide availability and competitive pricing.

The IRF540PBF operates as a voltage-controlled N-channel enhancement-mode power MOSFET. Key operating principles include: (1) Enhancement-Mode Operation – the device is normally OFF when VGS=0V; a positive gate-source voltage above the threshold (VGS(th) 2-4V) creates an inversion layer in the P-body region, forming a conductive N-type channel; the channel resistance (RDS(on)) decreases as VGS increases; (2) Vertical DMOS Structure – the IRF540 uses a vertical double-diffused MOS (VDMOS) structure where current flows vertically from the drain (bottom of die) through the epitaxial layer and channel to the source (top of die); this structure provides high current density and low on-resistance; (3) RDS(on) vs VGS – at VGS=10V, RDS(on) is 44mOhm max; at VGS=5V, RDS(on) increases to approximately 52mOhm; for minimum conduction loss, 10V gate drive is recommended; (4) Switching Performance – the total gate charge (Qg=71nC) determines the energy required to switch the MOSFET; the gate driver must supply Qg in the desired switching time (t = Qg / Ig); for example, a 1A gate driver achieves ~71ns switching time; (5) Body Diode – the intrinsic P-N junction between P-body and N-epi forms a body diode from source to drain; in motor drive and inductive load applications, this diode conducts during dead-time periods; the body diode has a forward voltage of approximately 1.3V and reverse recovery time of several hundred nanoseconds.

Pin Nombre Función
1 Puerta Gate terminal (drive 10V for minimum RDS(on))
2 Drenaje Drain terminal (connected to tab)
3 Fuente Source terminal
Pestaña Drenaje Drain connection (electrically connected to pin 2)
  • H-bridge motor driver: four IRF540 in full-bridge for 24V/10A DC motor with 10V gate drive
  • DC-DC buck converter: low-side switch in 48V to 12V converter at 100kHz switching frequency
  • Solenoid driver: switch 24V/5A solenoid with flyback diode for inductive kickback
  • Load switch: high-side P-MOSFET alternative not needed; low-side switch for battery disconnect
Fabricante Número de pieza Paquete Notas
Infineon IRF540NPBF TO-220 Newer version, improved RDS(on)
Infineon IRLZ44NPBF TO-220 Logic-level gate (IR prefix), 55V/47A
Infineon IRF640NPBF TO-220 200V/18A, higher voltage version
Infineon IRFB4110PBF TO-220 100V/180A, much lower RDS(on)
onsemi FQP30N06L TO-220 60V/30A, logic-level gate
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