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2N7002Q-7-F

N-channel 60V 190mA MOSFET, AEC-Q101, 1.2 Ohm Ron, SOT-23-3

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Pieza del fabricante：

2N7002Q-7-F

Paquete：

SOT-23-3

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The 2N7002Q-7-F from onsemi is an N-channel enhancement-mode MOSFET with 60V drain-source voltage and 190mA continuous drain current. AEC-Q101 qualified for automotive applications, it features low threshold voltage and low on-resistance in a compact SOT-23 package.

Especificaciones

Tipo N-channel Enhancement MOSFET
VDS 60V
VGS +/-20V
ID (continuo) 190mA
RDS(on) 1.2 Ohm (typ at VGS=10V)
VGS(th) 1.0V to 2.5V
Paquete SOT-23-3
Temperatura de funcionamiento -55 to +150 C
Cualificación AEC-Q101

Características

  • AEC-Q101 qualified for automotive
  • Low threshold voltage: 1.0V min
  • Low on-resistance: 1.2 Ohm typical
  • Compact SOT-23-3 surface mount package
  • Fully characterized avalanche voltage and current
  • ESD protected gate

Aplicaciones

  • Automotive low-power switching
  • Logic-level load driving
  • Relay and solenoid drivers
  • Battery-powered applications

The 2N7002Q-7-F is an N-channel enhancement-mode MOSFET from onsemi, AEC-Q101 qualified for automotive applications. With a 60V drain-source rating and 190mA continuous drain current, it is designed for low-power switching applications. The low threshold voltage (1.0V to 2.5V) enables direct drive from 3.3V or 5V logic, while the low on-resistance of 1.2 Ohm minimizes conduction losses. The compact SOT-23-3 package makes it ideal for space-constrained designs. The device is fully avalanche characterized and features ESD protection on the gate.

The 2N7002Q-7-F is an enhancement-mode N-channel MOSFET where current flows from drain to source when the gate-source voltage exceeds the threshold. The vertical DMOS structure provides low on-resistance and fast switching. The gate oxide is designed for a maximum VGS of +/-20V, with ESD protection clamps to prevent oxide damage. When VGS exceeds the threshold voltage, an inversion layer forms under the gate oxide, creating a conductive channel between drain and source. The low threshold voltage allows operation from logic-level control signals.

Pin Nombre Función
1 G Puerta
2 S Fuente
3 D Drenaje
  • Automotive logic-level load switching with 3.3V/5V microcontroller control
  • Relay and solenoid driver circuits in automotive body electronics
  • Battery-powered devices needing low-threshold MOSFET switching
  • Level translation and general-purpose digital switching
Modelo Fabricante Diferencia clave
2N7002LT1G onsemi Non-automotive version
2N7002K-7 onsemi Lower RDS(on) variant
BSS138 Nexperia 50V, 220mA, logic-level
DMN2075U Diodos Inc 20V, lower RDS(on)
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