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2N2907A

PNP -60V -600mA BJT, hFE 100-300, TO-92, complementary to 2N2222A

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Pieza del fabricante：

2N2907A

Paquete：

TO-92-3

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The 2N2907A from onsemi is a general-purpose PNP bipolar junction transistor rated at -60V VCEO and -600mA IC. Complementary to the 2N2222A NPN transistor, it is widely used in push-pull amplifier output stages and general-purpose switching. Packaged in TO-92.

Especificaciones

Tipo PNP Bipolar Junction Transistor
VCEO -60V
IC (continuous) -600mA
hFE (at 150mA) 100-300
fT 200MHz
VCE(sat) -0.4V (typ at 150mA)
Power Dissipation 625mW
Paquete TO-92-3
Temperatura de funcionamiento -55 to +150 C

Características

  • Complementary PNP to 2N2222A
  • High current gain: hFE 100-300
  • 200MHz transition frequency
  • Low saturation voltage: -0.4V typical
  • Industry standard TO-92 package

Aplicaciones

  • Push-pull amplifier output stages
  • General-purpose PNP switching
  • Complementary driver circuits
  • Current mirror and bias networks

The 2N2907A is a general-purpose PNP bipolar junction transistor from onsemi, rated at -60V VCEO and -600mA IC with hFE of 100-300. As the complementary PNP device to the ubiquitous 2N2222A NPN transistor, it is commonly used in push-pull amplifier output stages, complementary driver circuits, and current mirror configurations. The 200MHz transition frequency supports medium-speed switching applications. The A suffix version provides tighter specifications than the non-A 2N2907. Its low cost and wide availability make it a staple in analog circuit design.

The 2N2907A uses a silicon PNP epitaxial planar structure. In the active region, base current flowing out of the base terminal controls a larger collector current flowing into the collector, with the current gain (hFE) typically 100-300 at 150mA. For switching applications, the transistor is driven into saturation by extracting sufficient base current. The PNP structure has holes as majority carriers in the emitter, which have lower mobility than electrons in NPN devices, resulting in a slightly lower transition frequency (200MHz vs 300MHz for the 2N2222A). The base-emitter forward voltage is approximately -0.7V.

Pin Nombre Función
1 Emisor Emitter terminal
2 Base Base control terminal
3 Colector Collector terminal
  • Push-pull audio amplifier output stages paired with 2N2222A
  • General-purpose PNP switching in complementary driver circuits
  • Current mirror and bias networks in analog design
  • Low-side PNP driver for relay and solenoid control
Modelo Fabricante Diferencia clave
2N2222A onsemi Complementary NPN device
BC557 Nexperia PNP, -45V, -100mA, European equivalent
2N3906 onsemi PNP, -40V, -200mA, lower current
MMBT2907A onsemi SOT-23 SMD version
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