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2N7000

N-channel 60V 200mA small-signal MOSFET, 1.8 Ohm Ron, TO-92

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Pieza del fabricante：

2N7000

Paquete：

TO-92-3

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The 2N7000 from onsemi is an N-channel enhancement-mode small-signal MOSFET rated at 60V and 200mA with 1.8 Ohm on-resistance. Packaged in TO-92, it is one of the most popular general-purpose MOSFETs for low-power switching, logic-level driving, and relay control.

Especificaciones

Tipo N-channel Enhancement MOSFET
VDS 60V
VGS +/-20V
ID (continuo) 200mA
RDS(on) 1.8 Ohm (max at VGS=10V)
VGS(th) 0.8V to 3.0V
Power Dissipation 350mW
Paquete TO-92-3
Temperatura de funcionamiento -55 to +150 C

Características

  • Logic-level gate drive compatible
  • Low threshold voltage: 0.8V minimum
  • Compact TO-92 package
  • Low on-resistance: 1.8 Ohm at 10V
  • High input impedance (voltage controlled)
  • Complementary PNP: BS250P

Aplicaciones

  • Low-power switching and logic-level driving
  • Relay and solenoid drivers
  • LED driving circuits
  • Level shifting and interfacing

The 2N7000 from onsemi is one of the most widely used small-signal N-channel MOSFETs. Rated at 60V drain-source voltage and 200mA drain current, it is designed for low-power switching applications. The low threshold voltage (0.8V to 3.0V) allows direct drive from 3.3V or 5V logic. The TO-92 package is ideal for through-hole prototyping and low-volume production. With 1.8 Ohm maximum on-resistance at 10V gate drive, it provides efficient switching for loads such as LEDs, relays, and small solenoids. Its voltage-controlled gate eliminates the base current drive requirements of bipolar transistors.

The 2N7000 is a small-signal vertical DMOS MOSFET. When the gate-source voltage exceeds the threshold (0.8-3.0V), an inversion layer forms under the gate oxide creating a conductive N-type channel between drain and source. The MOSFET gate is electrically isolated from the channel by the gate oxide, resulting in virtually zero DC gate current. The device operates as a voltage-controlled switch: at VGS above threshold, the channel conducts with RDS(on) of 1.8 Ohm at 10V; at VGS below threshold, the channel is off with only nanoamp leakage. The low gate charge (approximately 1nC) enables fast switching with minimal drive power.

Pin Nombre Función
1 Fuente Source terminal
2 Puerta Gate control input
3 Drenaje Drain terminal
  • Logic-level load switching from 3.3V/5V microcontroller GPIO pins
  • Small relay and solenoid driver circuits with 200mA current capability
  • LED driving and PWM dimming with 60V voltage margin
  • Level shifting between different voltage domains in mixed-signal systems
Modelo Fabricante Diferencia clave
2N7002 onsemi SOT-23 SMD, 60V, 200mA
BSS138 Nexperia 50V, 220mA, SOT-23, logic-level
BS170 onsemi 60V, 500mA, TO-92, higher current
FDV301N onsemi 25V, 220mA, SOT-23, very low threshold
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