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IRF4905STRLPBF

P-channel -55V -74A power MOSFET, 0.02 Ohm Ron, D2PAK, Infineon

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Pieza del fabricante：

IRF4905STRLPBF

Paquete：

D2PAK (TO-263-3)

Marca：
Categorías de productos：
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Descripción

Productos

The IRF4905STRLPBF from Infineon Technologies is a P-channel power MOSFET with -55V drain-source voltage and -74A continuous drain current. Featuring very low on-resistance of 0.02 Ohm, it is designed for high-current switching applications in a D2PAK (TO-263) package.

Especificaciones

Tipo P-channel Enhancement MOSFET
VDS -55V
VGS +/-20V
ID (continuo) -74A
RDS(on) 0.02 Ohm (max at VGS=-10V)
Power Dissipation 250W
Paquete D2PAK (TO-263-3)
Temperatura de funcionamiento -55 to +175 C

Características

  • Very low RDS(on): 0.02 Ohm maximum
  • High current capability: -74A
  • Low gate charge for fast switching
  • Repetitive avalanche rated
  • Lead-free and RoHS compliant
  • Surface mount D2PAK package

Aplicaciones

  • High-side switching in automotive
  • Battery disconnect switches
  • DC motor H-bridge drivers
  • Power management in UPS systems

The IRF4905STRLPBF is a P-channel power MOSFET from Infineon Technologies featuring -55V drain-source voltage and -74A continuous drain current. The very low on-resistance of 0.02 Ohm makes it ideal for high-current switching applications where minimal conduction loss is critical. The D2PAK (TO-263) surface mount package provides excellent thermal performance with a power dissipation rating of 250W. The device is repetitive avalanche rated and suitable for harsh automotive and industrial environments. The L prefix indicates lead-free construction compliant with RoHS directives.

The IRF4905STRLPBF is a P-channel enhancement-mode MOSFET where current flows from source to drain when the gate-source voltage is driven below the threshold (negative VGS). The vertical DMOS structure uses a planar stripe process to achieve low on-resistance and high current handling. When VGS exceeds the threshold magnitude, an inversion layer forms under the gate oxide, creating a conductive P-type channel. The low gate charge enables fast switching, reducing switching losses in high-frequency applications. The body diode provides a natural freewheeling path in inductive load applications.

Pin Nombre Función
1 G Puerta
2 D Drain (tab/heatsink)
3 S Fuente
  • Automotive high-side load switching with very low conduction losses
  • Battery disconnect and protection circuits requiring high current P-channel MOSFET
  • H-bridge motor drivers using complementary N/P MOSFET pairs
  • UPS and power supply OR-ing circuits with low forward voltage drop
Modelo Fabricante Diferencia clave
IRF4905PBF Infineon TO-220 through-hole version
IRFR9310TRPBF Infineon -100V, -4.5A, DPAK
FQP47P06 onsemi -60V, -47A, TO-220
STD75P3LLH6 ST -60V, -75A, D2PAK
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