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BSC109N10NS3G

100V OptiMOS N-CH MOSFET, 10.9mOhm, 36A, SuperSO-8

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Pieza del fabricante：

BSC109N10NS3G

Paquete：

SuperSO-8 / PG-TDSON-8 (5.0 x 6.0 x 1.0 mm)

Marca：
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Descripción

Productos

The BSC109N10NS3G from Infineon Technologies is a 100V, 10.9 mOhm OptiMOS N-channel power MOSFET with 36A current rating in a SuperSO-8 (PG-TDSON-8) package.

Especificaciones

Tipo 100V N-Channel OptiMOS Power MOSFET
VDS 100 V
RDS(on) (max) 10.9 mOhm @ VGS=10V
ID 36 A @ TC=25C
Gate Charge (Qg) 38 nC (typical)
Input Capacitance (Ciss) 3010 pF (typical)
VGS(th) 2.1 V (typical)
Paquete SuperSO-8 (PG-TDSON-8)
Temperatura de funcionamiento -55C to +175C (TJ)

Características

  • 10.9 mOhm ultra-low RDS(on) at 100V
  • 36A continuous drain current
  • SuperSO-8 package with exposed die pad
  • 100% avalanche tested
  • OptiMOS technology for high efficiency
  • RoHS compliant

Aplicaciones

  • DC-DC converter synchronous rectification
  • Motor drive half-bridge
  • Hot-swap and ORing power switching
  • Battery management system switching

The BSC109N10NS3G from Infineon Technologies is a 100V N-channel OptiMOS power MOSFET with 10.9 mOhm maximum on-resistance in a SuperSO-8 surface mount package. The OptiMOS technology uses charge-compensated superjunction structures to achieve the very low specific on-resistance (RDS(on) x Area) that enables high-efficiency power conversion. The 36A continuous current rating and 175C maximum junction temperature support demanding applications. The SuperSO-8 (PG-TDSON-8) package features an exposed die pad for efficient heat dissipation to the PCB, with a junction-to-mounting base thermal resistance of approximately 1.5 K/W. The 38 nC gate charge supports switching frequencies up to several hundred kHz.

The BSC109N10NS3G uses Infineon’s OptiMOS superjunction technology where alternating N and P columns in the drift region provide lateral depletion during the blocking state, supporting the 100V rating with a thinner drift region than conventional MOSFETs. This thinner drift region reduces on-resistance to 10.9 mOhm. The device is constructed with a vertical DMOS cell structure where the current flows vertically from the source (top) through the channel and drift region to the drain (bottom/die pad). The SuperSO-8 package bonds the die pad directly to the PCB copper for thermal management. The 38 nC total gate charge determines the switching speed and gate drive power: P_gate = Qg x VGS x f_sw. At 100 kHz switching frequency with 10V gate drive, the gate drive power is approximately 38 mW.

Pin Nombre Tipo Función
1 Fuente E/S Source terminal
2 Fuente E/S Source terminal
3 Fuente E/S Source terminal
4 Puerta Entrada Gate terminal
5-8 Drain (pad) E/S Drain (exposed die pad on bottom)
  • 48V DC-DC converter synchronous rectifier with 10.9mOhm conduction loss
  • BLDC motor inverter half-bridge switch at 100kHz PWM
  • Telecom 48V hot-swap MOSFET with 36A rating
  • Battery management system charge/discharge switch
Fabricante Número de pieza Paquete Notas
Infineon BSC060N10NS3G SuperSO-8 6 mOhm, lower RDS(on)
Infineon BSC160N10NS3G SuperSO-8 16 mOhm, higher RDS(on)
onsemi NTMFS5C612N PowerPAK SO-8 100V, 7.3mOhm, similar class
Vishay SiRA12DP PowerPAK SO-8 100V, 11mOhm, equivalent
Infineon IPB109N10N3G D2PAK Same die, D2PAK package
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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