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BAR43SFILM

Schottky Diode, 30V 100mA, 340mV VF, SOD-323

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Pieza del fabricante：

BAR43SFILM

Paquete：

SOD-323 (1.7 x 1.25 x 0.95 mm)

Marca：
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Descripción

Productos

The BAR43SFILM from Infineon Technologies is a silicon Schottky diode with 30V reverse voltage, 100mA forward current, and low forward voltage in an SOD-323 surface mount package.

Especificaciones

Tipo Silicon Schottky Diode (Single)
Peak Reverse Voltage (VRRM) 30 V
Forward Current (IF) 100 mA (continuous)
Forward Voltage (VF) 340 mV (typical) @ IF=1mA
Reverse Leakage (IR) 2 uA (max) @ VR=25V
Junction Capacitance 1.0 pF (typical) @ VR=0V
Total Power Dissipation 250 mW
Paquete SOD-323 (SC-76)
Temperatura de funcionamiento -65C to +150C

Características

  • 30V Schottky barrier diode
  • Low forward voltage: 340 mV typical @ 1mA
  • Low junction capacitance: 1.0 pF
  • SOD-323 compact surface mount package
  • FILM suffix indicates Infineon thin-film process version

Aplicaciones

  • RF detection and mixing
  • High-frequency signal rectification
  • Low-voltage OR-ing
  • Reverse polarity protection

The BAR43SFILM from Infineon Technologies is a silicon Schottky barrier diode in a compact SOD-323 surface mount package. The 30V reverse voltage and 100mA forward current ratings make it suitable for low-voltage signal rectification, RF detection, and mixing applications. The 340 mV typical forward voltage at 1mA provides efficient low-signal rectification with minimal voltage drop. The 1.0 pF junction capacitance at 0V bias is exceptionally low, preserving signal integrity in high-frequency circuits up to several GHz. The FILM suffix indicates this device is manufactured using Infineon’s thin-film process technology, which provides improved consistency and reliability compared to standard planar Schottky diodes. The BAR43 series is widely used in RF and microwave applications.

The BAR43SFILM uses a metal-semiconductor (Schottky) junction formed by depositing a thin metal film (typically platinum silicide or titanium tungsten) on an N-type silicon substrate. Unlike a P-N junction diode, the Schottky junction is a majority-carrier device where electrons cross the barrier without minority carrier storage, resulting in near-zero reverse recovery time. The barrier height (approximately 0.5-0.6 eV for silicon Schottky diodes) determines the trade-off between forward voltage drop and reverse leakage current. The thin-film process (FILM) creates a very precise, uniform barrier with consistent electrical characteristics. The 340 mV VF at 1mA is lower than a silicon P-N junction (~600 mV) because the Schottky barrier height is lower. The 1.0 pF junction capacitance is determined by the small active junction area (approximately 0.01 mm^2) and the thin epitaxial layer.

Pin Nombre Tipo Función
1 Ánodo Terminal Metal-side anode
2 Cátodo Terminal Semiconductor-side cathode
  • RF signal detector in 2.4 GHz receiver with 1pF capacitance for minimal loading
  • Low-voltage OR-ing diode for dual-battery power path with 340mV drop
  • Mixer diode in superheterodyne receiver with fast switching
  • Reverse polarity protection for 3.3V microcontroller supply rail
Fabricante Número de pieza Paquete Notas
Infineon BAR43S-02LS SOD-323 Same function, different process
Nexperia BAT54J,115 SOD-323 30V Schottky, similar class
onsemi BAT54S SOT-23 30V dual Schottky, series config
Diodos Inc BAT54S-7-F SOT-23 30V dual Schottky, series config
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