نظرة عامة على المنتج
The BSC109N10NS3G from Infineon Technologies is a 100V, 10.9 mOhm OptiMOS N-channel power MOSFET with 36A current rating in a SuperSO-8 (PG-TDSON-8) package.
المواصفات الرئيسية
| النوع | 100V N-Channel OptiMOS Power MOSFET |
| VDS | 100 V |
| RDS(on) (max) | 10.9 mOhm @ VGS=10V |
| بطاقة الهوية | 36 A @ TC=25C |
| Gate Charge (Qg) | 38 nC (typical) |
| Input Capacitance (Ciss) | 3010 pF (typical) |
| VGS(th) | 2.1 V (typical) |
| الحزمة | SuperSO-8 (PG-TDSON-8) |
| درجة حرارة التشغيل | -55C to +175C (TJ) |
الميزات
- 10.9 mOhm ultra-low RDS(on) at 100V
- 36A continuous drain current
- SuperSO-8 package with exposed die pad
- 100% avalanche tested
- OptiMOS technology for high efficiency
- RoHS compliant
التطبيقات
- DC-DC converter synchronous rectification
- Motor drive half-bridge
- Hot-swap and ORing power switching
- Battery management system switching