الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > الدوائر المتكاملة الخطية التناظرية > IPD60R385CP

IPD60R385CP

600V CoolMOS N-CH MOSFET, 3.85Ohm, 3.3A, DPAK, Superjunction

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جزء الشركة المصنعة ： جزء الشركة المصنعة

IPD60R385CP

الحزمة ： الحزمة

DPAK / TO-252-3 (6.5 x 5.5 x 2.3 mm)

الوصف

نظرة عامة على المنتج

The IPD60R385CP from Infineon Technologies is a 600V, 3.85 Ohm CoolMOS N-channel enhancement mode power MOSFET in a DPAK package for high-efficiency switching applications.

المواصفات الرئيسية

النوع	600V CoolMOS N-Channel Power MOSFET
VDS	600 V
RDS(on) (max)	3.85 Ohm @ VGS=10V
بطاقة الهوية	3.3 A @ TC=25C
Gate Charge (Qg)	8.6 nC (typical)
Input Capacitance (Ciss)	310 pF (typical)
Switching Energy (Eoff)	30 uJ (typical)
VGS(th)	3.0 V (typical)
الحزمة	DPAK (TO-252)
درجة حرارة التشغيل	-55C to +150C (TJ)

الميزات

Superjunction CoolMOS technology for low RDS(on) x area
3.85 Ohm RDS(on) at 600V rating
Low 8.6 nC gate charge for fast switching
Low switching energy (Eoff = 30 uJ)
100% avalanche tested
DPAK surface mount package
RoHS compliant

التطبيقات

Switch-mode power supply (SMPS) primary switch
PFC boost converter
LED lighting offline driver
Motor drive inverter

مقدمة المنتج:IPD60R385CP مقدمة المنتج

The IPD60R385CP from Infineon Technologies is a 600V N-channel CoolMOS superjunction power MOSFET with 3.85 Ohm on-resistance in a DPAK surface mount package. The superjunction technology uses alternating N and P columns in the drift region to achieve the low specific on-resistance (RDS(on) x Area) that is impossible with conventional planar MOSFET structures. The 8.6 nC gate charge and 30 uJ turn-off energy enable efficient high-frequency switching in offline power supplies. The device is 100% avalanche tested for ruggedness in unclamped inductive switching applications. The DPAK package provides good thermal performance with a junction-to-ambient thermal resistance of approximately 62 K/W on a standard PCB footprint.

مبدأ العمل:IPD60R385CP مبدأ العمل

The IPD60R385CP uses Infineon’s CoolMOS superjunction technology, which arranges alternating N-type and P-type columns in the drift region instead of the uniform N-type drift layer used in conventional MOSFETs. During the blocking state, the P-columns deplete the N-columns laterally, creating a high electric field that supports the 600V rating with a much thinner drift region than conventional designs. This thinner drift region has lower resistance, resulting in the 3.85 Ohm RDS(on) despite the 600V rating. During conduction, applying VGS > VGS(th) creates an inversion layer (channel) connecting the N+ source to the N-drift region, allowing current flow. The RDS(on) of 3.85 Ohm represents the sum of channel resistance, accumulation layer resistance, and drift region resistance. The low 8.6 nC gate charge is achieved through a fine-pitch cell structure that minimizes the gate-drain overlap capacitance (Miller capacitance), enabling fast switching and reducing switching losses. The body diode (parasitic P-N junction between P-body and N-drift) can conduct reverse current but has a relatively slow reverse recovery, making this device less suitable for hard-switched half-bridge applications.

وصف الدبوس:IPD60R385CP تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
1	البوابة	المدخلات	MOSFET gate
2	Drain (tab)	الإدخال/الإخراج	MOSFET drain (connected to heat slug)
3	المصدر	الإدخال/الإخراج	MOSFET source

Application Scenarios:In which products and applications isIPD60R385CP مستعمل

85-265VAC offline flyback converter primary switch at 65kHz
PFC boost converter switch in 200W adapter power supply
Isolated LED driver primary switch with low switching losses
Motor inverter leg with IGBT replacement for <5kHz switching

Alternative Models:What chips are recommended as replacements for IPD60R385CP

الشركة المصنعة	رقم الجزء	الحزمة	الملاحظات
إنفينيون	IPD60R280P6S	DPAK	2.8 Ohm, 600V, lower RDS(on)
إنفينيون	IPD60R600P7S	DPAK	6 Ohm, 600V, higher RDS(on), lower cost
ST	STF10NM60N	DPAK	600V, 0.65 Ohm, higher current
أونسمي	FCD860N60Z	DPAK	600V, 0.98 Ohm, similar class
إنفينيون	IPA60R385CP	TO-220	Same die, through-hole package