Product Overview
The DMN5L06DWK-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET array housed in a compact SOT-363 (SC-88) surface-mount package. Designed for low-voltage logic-level switching applications, it features a 50V drain-source voltage rating, 305mA continuous drain current per channel, and a low gate threshold voltage of 1V maximum. The device is AEC-Q101 qualified, making it suitable for automotive and industrial applications.
Key Specifications
| VDS (Drain-Source Voltage) | 50V |
| ID (Continuous Drain Current) | 305mA |
| RDS(on) Max | 2 Ohm @ 50mA, 5V |
| VGS(th) Max | 1V @ 250uA |
| Power Dissipation | 250mW |
| Input Capacitance (Ciss) | 50pF @ 25V |
| Configuration | Dual N-Channel |
| Operating Temperature | -65 to 150°C |
| Package | SOT-363 (SC-88) |
Features
- Logic-level gate drive compatible with 2.5V and 3.3V systems
- Low gate threshold voltage (0.49V min, 1V max)
- Low input/output leakage current
- Fast switching speed (tr = 1.8ns, tf = 8.4ns typical)
- Halogen-free, green device
- AEC-Q101 qualified for automotive reliability
- UL94V-0 flammability rating
Applications
- Load switching in portable devices
- Battery management circuits
- Automotive power management
- Level shifting and signal routing
- Motor driver pre-drivers