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BC807

PNP BJT, -45V, -500mA, SOT-23, complementary to BC847

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Manufacturer Part：

BC807

Package：

SOT-23 (2.9 x 1.3 mm)

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Description

Product Overview

The BC807 from Nexperia is a general-purpose PNP bipolar junction transistor in a SOT-23 package. Rated at 45V VCEO and 500mA IC, it provides complementary pairing with BC847 (NPN) for push-pull amplifier and driver circuits in space-constrained applications.

Key Specifications

Type PNP
VCEO -45 V
IC (max) -500 mA
VCE(sat) -0.3 V @ -100mA
hFE (min) 100 (BC807-16)
fT 100 MHz
Power Dissipation 330 mW
Package SOT-23
Operating Temperature -65°C to +150°C (Tj)

Features

  • General-purpose PNP transistor in compact SOT-23 package
  • Complementary pair with BC847 NPN transistor
  • 500mA collector current for medium-power driver applications
  • Three gain groups available: -16, -25, -40
  • Low saturation voltage of 0.3V at 100mA
  • Wide operating temperature range

Applications

  • Push-pull audio output stages with BC847 complement
  • General-purpose switching and signal amplification
  • LED and relay driver circuits
  • Low-power voltage regulator pass elements
  • Sensor signal conditioning and level shifting

The BC807 from Nexperia is a general-purpose PNP bipolar junction transistor housed in a compact SOT-23 surface-mount package. Rated at -45V VCEO and -500mA continuous collector current, it forms a complementary pair with the BC847 NPN transistor, enabling push-pull amplifier and driver configurations. Three gain groups are available (BC807-16, -25, -40 with hFE of 100-250, 160-400, and 250-600 respectively) for design flexibility. The low saturation voltage of -0.3V at -100mA and transition frequency of 100MHz make it suitable for both switching and linear applications in consumer, industrial, and automotive electronics.

The BC807 operates as a PNP bipolar junction transistor. (1) Current flows from emitter to collector when the base-emitter junction is forward biased (base voltage lower than emitter by approximately 0.7V). The base current is amplified by the current gain (hFE) to produce a larger collector current, with IC = hFE x IB. (2) In switching applications, the transistor is driven between cutoff (base-emitter voltage below threshold, no collector current) and saturation (base current sufficient to drive VCE to saturation voltage of approximately 0.3V). (3) In linear amplifier applications, the transistor is biased in the active region where the collector current is proportional to the base current, with the transition frequency of 100MHz determining the useful bandwidth for small-signal amplification.

Pin Name Function
1 Base Control input
2 Emitter Current source (PNP)
3 Collector Current sink (PNP)
  • Push-pull audio output stages using BC807/BC847 complementary pair
  • LED driver switching with 500mA current capability
  • Relay and solenoid driver circuits in industrial controls
  • Low-dropout regulator pass element with low saturation voltage
  • Signal level shifting from positive to negative supply rails
Model Manufacturer Key Difference
BC807-16 Nexperia hFE 100-250 gain group
BC807-25 Nexperia hFE 160-400 gain group
BC807-40 Nexperia hFE 250-600 gain group
BC857 Nexperia Similar PNP, different gain
MMBT3906 onsemi PNP, 200mA, 40V, SOT-23
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