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TIP41C

6A NPN BJT, 100V Vceo, 65W, hFE 15, TO-220

15000

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制造商零件：

TIP41C

包装：

TO-220-3 (15.6 x 10.6 x 4.6mm, through-hole, tab=collector)

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说明

产品概览

The TIP41C is a 6A NPN medium-power bipolar junction transistor from onsemi (formerly Motorola) with 100V VCEO, 65W power dissipation, and 15 minimum hFE in a TO-220 through-hole package.

主要规格

极性 NPN
VCEO (Collector-Emitter) 100V
VCBO (Collector-Base) 100V
VEBO (Emitter-Base) 5V
IC (Continuous Collector Current) 6A
ICM (Peak Collector Current) 10A
hFE（直流电流增益） 15 min @ IC=3A, VCE=4V
VCE（饱和）（集电极-发射极饱和度） 1.5V max @ IC=6A, IB=600mA
fT (Transition Frequency) 3MHz typical
PD (Power Dissipation) 65W @ TC=25°C
RθJC (Junction-to-Case) 1.92°C/W
工作温度 -65°C to +150°C
包装 TO-220-3 (through-hole)

特点

  • 6A NPN medium-power BJT
  • 100V VCEO for general-purpose switching
  • 65W power dissipation with heatsink
  • hFE of 15 minimum at 3A collector current
  • Darlington-drive capable for high-current loads
  • Complementary PNP: TIP42C
  • TO-220 package with heatsink mounting tab

应用

  • Power switching and DC motor drive
  • 音频放大器输出级
  • Voltage regulator pass transistor
  • Relay and solenoid driver
  • General-purpose medium-power switching

The TIP41C from onsemi is a 6A NPN medium-power bipolar junction transistor in a TO-220 through-hole package. Rated at 100V VCEO and 65W power dissipation (with heatsink), it is suitable for medium-power switching and linear amplifier applications. The minimum hFE of 15 at 3A means the base must be driven with at least IC/hFE = 3A/15 = 200mA for saturation, which typically requires a small-signal driver transistor in a Darlington-like configuration. The complementary PNP type (TIP42C) enables push-pull amplifier and H-bridge motor drive designs. The TO-220 package’s metal tab (connected to the collector) provides a low thermal resistance path (1.92°C/W junction-to-case) to an external heatsink. The C suffix denotes the 100V VCEO version; lower-voltage TIP41A (60V) and TIP41B (80V) are also available.

The TIP41C is an NPN bipolar junction transistor (BJT) where a small base current (IB) controls a much larger collector current (IC). The current gain hFE = IC/IB; at IC=3A, the minimum hFE is 15, meaning IB must be at least 200mA to drive the transistor into saturation. In saturation, VCE drops to VCE(sat) of 1.5V max at IC=6A, IB=600mA. The power dissipated in the transistor is VCE × IC; in saturation at 6A, this is 1.5V × 6A = 9W. In linear (amplifier) operation, VCE may be much higher, and the dissipation can reach 65W (with heatsink). The base-emitter junction is a forward-biased diode with VBE ≈ 1.5V at IC=6A. The transition frequency (fT = 3MHz) limits the useable bandwidth; at frequencies above fT/hFE, the current gain drops below unity. For switching applications, the turn-on time is dominated by the base drive current: higher IB drives the transistor into saturation faster. Turn-off requires removing base current and discharging the stored charge in the base region; a negative base-emitter voltage or a base-emitter resistor speeds up turn-off.

针脚 名称 类型 说明
1 基地 输入 Base terminal controls collector current. VBE ≈ 1.5V at saturation (single transistor, not Darlington). Drive IB > IC/hFE(min) where hFE(min) = 15 at IC=3A. For switching applications, drive with IB of 50-100mA for reliable saturation at collector currents up to 6A.
2 收藏家 功率输出 Collector terminal connects to the load. Rated for 100V VCEO and 6A continuous collector current. The tab of TO-220 is electrically connected to Collector. Power dissipation 65W at TC=25°C. VCE(sat) = 1.5V max at IC=4A, IB=400mA.
3 发射器 输出 Emitter terminal. Connects to ground in common-emitter NPN configuration. Maximum emitter current equals collector current at 6A continuous. Device is designed for general-purpose amplifier and switching applications at medium power levels.

TIP41C pin assignment (TO-220-3, front view, pins down): Pin 1 (left) = Base, Pin 2 (center) = Collector/Tab, Pin 3 (right) = Emitter. This is a single NPN power transistor (not Darlington). The tab is connected to Collector. Complementary PNP: TIP42C (-100V/-6A). Family includes TIP41A (60V), TIP41B (80V), and TIP41C (100V) with identical pinout and current ratings.

  • DC Motor Drive: Low-side switch; base driven by small-signal transistor (2N2222) at IB>200mA for 3A motor current
  • Audio Amplifier: Push-pull pair (TIP41C + TIP42C) in class-AB; 3MHz fT supports audio bandwidth
  • Regulator Pass: Boost LM317 current by using TIP41C as external pass transistor; 6A total output
  • Relay Driver: 100V VCEO handles 24V relay coils with inductive kickback margin
  • Power Darlington: Cascade with small-signal driver (hFE=100) for composite hFE=1500; MCU GPIO drives 4A load
模型 制造商 主要区别 包装 Specs
TIP41A onsemi 60V VCEO, lower voltage version - -
TIP41B onsemi 80V VCEO, medium voltage version - -
TIP42C onsemi Complementary PNP, -100V, -6A - -
TIP31C onsemi 3A, 100V, smaller (40W) version - -
BD139-16 onsemi 1.5A, 80V, hFE 25-40, SOT-32 - -

TIP41C is a 100V/6A NPN power transistor from onsemi in TO-220. The complementary PNP is TIP42C (-100V/-6A). The TIP41A (60V) and TIP41B (80V) offer lower voltage ratings. The TIP31C provides 100V/3A for lower current needs. The BD243C offers 100V/6A with higher 10-50 hFE from ST. The MJE15030 provides 150V/8A for higher voltage/current. For MOSFET alternative, IRLZ44N provides 55V/47A with 22mΩ RDS(on) and logic-level gate drive.

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