产品概览
The SQS411ENW-T1-GE3 is a Vishay Siliconix AEC-Q101 qualified P-channel 40V TrenchFET® power MOSFET in a PowerPAK 1212-8W package. With 27.3mΩ max RDS(on) at 10V, 16A continuous drain current, and 53.6W power dissipation, it is designed for automotive load switching, motor drive, and DC-DC converter applications requiring high current in a compact footprint.
主要规格
| Channel Type | P-Channel Enhancement |
| Drain-Source Voltage (VDSS) | 40V (some sources list -30V) |
| On-Resistance (RDS(on)) Max | 27.3mΩ @ VGS=-10V, ID=-8A |
| On-Resistance (RDS(on)) Typ | 21mΩ @ -10V |
| Continuous Drain Current (ID) | -16A (TC=25°C) |
| Gate Charge (Qg) Max | 50nC @ VGS=-10V |
| Input Capacitance (Ciss) Max | 3191pF @ VDS=-25V |
| Gate Threshold (VGS(th)) Max | -2.5V @ ID=-250μA |
| 功率耗散 | 53.6W (TC=25°C) |
| 工作温度 | -55°C to +175°C |
| 资格 | AEC-Q101 |
特点
- AEC-Q101 qualified, TrenchFET® technology
- P-Channel 40V, 16A in compact PowerPAK 1212-8W
- Low RDS(on): 21mΩ typ. at -10V
- High power dissipation: 53.6W
- MSL 1 – Unlimited moisture sensitivity
- Halogen-free, lead-free
- 100% Rg and UIS tested
应用
- Automotive load switching
- DC-DC converter high-side P-channel switch
- Motor drive and bridge circuits
- Battery protection and management
- Power supply OR-ing