产品概览
The SQ2309CES-T1-GE3 is a Vishay Siliconix AEC-Q101 qualified P-channel 60V TrenchFET® power MOSFET in a compact SOT-23-3 package. With 370mΩ max RDS(on) at -10V, 1.7A continuous drain current, and 5.5nC typical gate charge, it is designed for automotive low-power load switching, battery management, and logic-level MOSFET drive applications.
主要规格
| Channel Type | P-Channel Enhancement |
| Drain-Source Voltage (VDSS) | -60V |
| On-Resistance (RDS(on)) Max | 370mΩ @ VGS=-10V, ID=-1.25A |
| On-Resistance (RDS(on)) Typ | 0.37Ω @ -10V; 0.5Ω @ -4.5V |
| Continuous Drain Current (ID) | -1.7A (TC=25°C) |
| Gate Charge (Qg) Typ/Max | 5.5nC typ / 8.5nC max @ -10V |
| Input Capacitance (Ciss) | 211pF typ / 265pF max @ -25V |
| Gate Threshold (VGS(th)) Max | -2.5V @ ID=-250μA |
| 功率耗散 | 2W (TC=25°C) |
| 工作温度 | -55°C to +175°C |
| 资格 | AEC-Q101 |
特点
- AEC-Q101 qualified, TrenchFET® technology
- P-Channel 60V in miniature SOT-23-3 package
- Low gate charge: 5.5nC typical
- Drive voltage: -4.5V and -10V rated
- MSL 1 – Unlimited moisture sensitivity
- Halogen-free, lead-free
- 100% Rg and UIS tested
应用
- Automotive load switching (low power)
- Battery management and protection
- Logic-level MOSFET gate drive
- Automotive infotainment power control
- General-purpose P-channel switching