产品概览
The SI4909DY-T1-GE3 is a Vishay Siliconix dual P-channel 40 V (D-S) TrenchFET MOSFET in an SO-8 package. It features an on-resistance of 27 mΩ at VGS = -10 V, continuous drain current of 8 A, and logic-level gate threshold. The device is optimized for load switching and power management applications, operating from -55°C to +150°C junction temperature.
主要规格
| VDS | -40 V |
| RDS(on) | 27 mΩ @ VGS = -10 V, ID = -8 A |
| 身份证 | -8 A (continuous) |
| VGS(th) | -1.2 V to -2.5 V |
| Qg | 63 nC @ VGS = -10 V |
| 西斯 | 2000 pF @ VDS = -20 V |
| 功率耗散 | 3.2 W |
| 包装 | SO-8 |
特点
- Dual P-channel configuration (isolated)
- TrenchFET technology
- Logic-level gate drive
- Low RDS(on): 27 mΩ max
- 40 V drain-source voltage rating
- 8 A continuous drain current
- Operating junction temperature: -55°C to +150°C
应用
- Load switching and power routing
- Battery disconnect switches
- DC-DC converter synchronous rectification
- Motor drive and control
- Power management in portable devices